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Xingwu Wang

Researcher at Alfred University

Publications -  37
Citations -  2971

Xingwu Wang is an academic researcher from Alfred University. The author has contributed to research in topics: Thin film & Particle size. The author has an hindex of 19, co-authored 37 publications receiving 2971 citations. Previous affiliations of Xingwu Wang include University of Rochester.

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Patent

Medical device with low magnetic susceptibility

TL;DR: An assembly that contains a medical device and biological material within which the medical device is disposed is defined in this paper, where the assembly has a direct or alternating current magnetic susceptibility within the range of from about plus 1 x 10-2 centimeter-grams to about minus 1x 10- 2 centimetergrams.
Patent

Magnetically shielded assembly

TL;DR: In this paper, the authors describe a shielded medical device implanted in a biological organism, which has a magnetic shield, and the magnetic shield contains a layer of nanomagnetic material; such layer has a morphological density of at least 98 percent; it is bonded to the medical device by means of an interlayer with a thickness of less than about 10 microns.
Patent

Medical device with multiple coating layers

TL;DR: An implantable medical device that contains two coating layers disposed above at least one of its surfaces is considered in this article, where the first coating contains a biologically active material; and the second coating layer contains a polymeric material and nanomagnetic material.
Patent

Novel nanomagnetic particles

TL;DR: A composition containing nanomagnetic particles is described in this paper, which has an average particle size of less than about 100 nanometers, a saturation magnetization of from about 2 to about 2,000 electromagnetic units per cubic centimeter, a phase transition temperature of about 40 to about 200 degrees Celsius, and a squareness of about 005 to about 10.
Patent

Magnetically shielded conductor

TL;DR: A magnetically shielded conductor assembly with a conductor device and a film of nanomagnetic material located above the conductor device was described in this article, which has a resistivity of from about 1 to about 2,000 micro ohm-centimeters.