SnO2: A comprehensive review on structures and gas sensors

The synthesis of semiconductor nanowires has been studied intensively worldwide for a wide spectrum of materials. Such low-dimensional nanostructures are not only interesting for fundamental research due to their unique structural and physical properties relative to their bulk counterparts, but also offer fascinating potential for future technological applications. Deeper understanding and sufficient control of the growth of nanowires are central to the current research interest. This Review discusses the various growth processes, with a focus on the vapor-liquid-solid process, which offers an opportunity for the control of spatial positioning of nanowires. Strategies for position-controlled and nanopatterned growth of nanowire arrays are reviewed and demonstrated by selected examples as well as discussed in terms of larger-scale realization and future prospects. Issues on building up nanowire-based electronic and photonic devices are addressed at the end of the Review, accompanied by a brief survey of recent progress demonstrated so far on the laboratory level.

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Semiconductor nanowires: from self-organization to patterned growth

Uniform, Axial-Orientation Alignment of One-Dimensional Single-Crystal Silicon Nanostructure Arrays†

A straightforward metal-particle-induced, highly localized site-specific corrosion-like mechanism was proposed for the formation of aligned silicon-nanowire arrays on silicon in aqueous HF/AgNO3 solution on the basis of convincing experimental results. The etching process features weak dependence on the doping of the silicon wafers and, thus, provides an efficient method to prepare silicon nanowires with desirable doping characteristics. The novel electrochemical properties between silicon and active noble metals should be useful for preparing novel silicon nanostructures and also new optoelectronic devices.

Metal-particle-induced, highly localized site-specific etching of Si and formation of single-crystalline Si nanowires in aqueous fluoride solution.

In this paper we review the theory of silicon nanowires. We focus on nanowires with diameters below 10 nm, where quantum effects become important and the properties diverge significantly from those of bulk silicon. These wires can be efficiently treated within electronic structure simulation methods and will be among the most important functional blocks of future nanoelectronic devices. Firstly, we review the structural properties of silicon nanowires, emphasizing the close connection between the growth orientation, the cross-section and the bounding facets. Secondly, we discuss the electronic structure of pristine and doped nanowires, which hold the ultimate key for their applicability in novel electronic devices. Finally, we review transport properties where some of the most important limitations in the performances of nanowire-based devices can lay. Many of the unique properties of these systems are at the same time defying challenges and opportunities for great technological advances.

Colloquium: Structural, electronic, and transport properties of silicon nanowires

We investigate the structural, electronic, and optical properties of hydrogen-passivated silicon nanowires along [110] and [111] directions with diameter d up to 4.2 nm from first principles. The size and orientation dependence of the band gap is investigated and the local-density gap is corrected with the GW approximation. Quantum confinement becomes significant for d<2.2 nm, where the dielectric function exhibits strong anisotropy and new low-energy absorption peaks start to appear in the imaginary part of the dielectric function for polarization along the wire axis.

Xinyuan Zhao

Papers

Quantum confinement and electronic properties of silicon nanowires.

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