The depth of field is extended by using a simple structure. Provided is an imaging device comprising: an objective optical system that comprises an aperture stop that is disposed at an intermediate position on an optical axis and that has an opening that allows incident light from an object to pass therethrough; and an imaging element that acquires an optical image of the object, which is formed by the objective optical system, wherein pixels of the imaging element are arranged in a square along two mutually orthogonal axial directions, and the aperture stop includes a light-blocking portion at a portion aligned with the optical axis, the light-blocking portion having a square shape with sides inclined at 45° relative to the directions in which the pixels are arranged.

Imaging device and endoscope

A method of manufacturing an airbag with which an airbag having a left airbag section and a right airbag section and constituted so that peripheral edge portions of an opening of an opposing face of each bag are sewn together can be easily manufactured. An airbag 10 is constituted by a total of two panels, namely, an inside panel 20 and an outside panel 30. After the inside panel 20 and the outside panel 30 are overlapped in a double-folded state so that airbag outer side faces thereof oppose to each other, opposite sides 61, 62 are sewn together, and lower edge portions of the inside panel 20 and the outside panel 30 are sewn together. Then, the inside panel 20 is reversed so that airbag outer side faces of a right side 20R and a left side 20L oppose each other, and the peripheral edge portions of the openings 18, 18 are sewn together. Then, the remaining peripheral edge portions of the inside panel 20 and the outside panel 30 are sewn together. Then, the outside panel 30 is reversed through an opening port M on rear end sides of the inside panel 20 and the outside panel 30, and the opening port M is sealed.

Method of manufacturing airbag

PROBLEM TO BE SOLVED: To suppress deterioration in depth of focus even when main patterns are arranged at random. SOLUTION: A sub-pattern 303 and a sub-pattern 306 are replaced with a rectangular sub-pattern 310 inside an external-shape rectangle 401 including outermost portions of the sub-pattern 303 and sub-pattern 306 as portions of its outer periphery. A sub-pattern 309 after the replacement is preferably square, and the length of one side is determined according to the length of the external-shape rectangle. The center position of a sub-pattern 310 after the replacement is preferably in the center of the external-shape rectangle 401 or in the center of gravity of an area including the sub-patterns 303 and 306 before the replacement. COPYRIGHT: (C)2010,JPO&INPIT

Photomask, manufacturing device for semiconductor device having the photomask, and manufacturing method for the semiconductor device using the photomask

PROBLEM TO BE SOLVED: To provide a photomask blank and a method for manufacturing photomasks capable of highly accurately forming a fine photomask pattern and improving the productivity of the photomask.SOLUTION: A photomask 30 is formed by using a photomask blank 10. The photomask 10 is manufactured by thinning a film thickness of a chromium film 13 of a region to be a non-light-shielding part of the photomask 30 more than the film thickness of the chromium film 13 at a region to be a light-shielding part, and the photomask 30 is manufactured using the photomask blank 10. The film thickness of the chromium film 13 of the region to be the non-light-shielding part may be thinned by etching, or the film thickness of the chromium film 13 to be the light shielding part may be thickened by sputtering.

Photomask blank and method for manufacturing photomask

PROBLEM TO BE SOLVED: To provide a method for manufacturing a photomask, by which dimensional accuracy of a transfer pattern can be improved, and to provide a method for manufacturing a semiconductor device.SOLUTION: The method for manufacturing a photomask includes steps of: forming a light-shielding region 18 including a first light-shielding film on a transparent substrate 10 in a periphery of a device region 16 by patterning the first light-shielding film 14 formed on the transparent substrate 10; forming a resist film 32 on the transparent substrate, the resist film formed with an opening 34 which exposes at least the light-shielding region in a portion outside a corner of the device region; forming a second light-shielding film 24 on the resist film and in the opening; and forming a light-shielding pattern of the second light-shielding film on at least the light-shielding region in the portion outside the corner of the device region by removing the second light-shielding film on the resist film with the resist film.

Method for manufacturing photomask and method for manufacturing semiconductor device

PROBLEM TO BE SOLVED: To enlarge a depth of focus by considering a method for disposing an auxiliary pattern according to the pattern possession density, relating to an exposure mask, a mask pattern correction method and a semiconductor device. SOLUTION: An auxiliary pattern corresponding to a certain pattern such as a memory pattern is formed in a different type of an auxiliary pattern from auxiliary patterns for other patterns. COPYRIGHT: (C)2007,JPO&INPIT

Exposure mask, mask pattern correction method, and semiconductor device

PROBLEM TO BE SOLVED: To satisfy both patterning accuracy and light shielding performance in using a hard mask and a light shielding band light shielding film in common relating to a method of manufacturing a halftone phase shift mask and a method of manufacturing a semiconductor device. SOLUTION: The manufacturing method includes: a process of sequentially forming a halftone film 2 and a hard mask-cum-light shielding film 3 on a transparent substrate 1; a process of forming a film decrease compensating light shielding film 4 on the hard mask-cum-light shielding film 3; a process of selectively eliminating the film decrease compensating light shielding film 4 on a main circuit region 6; a process of forming a pattern on the hard mask-light shielding film 3 exposed to the main circuit region 6 to form a hard mask 7; a process of etching the halftone film 2 with the hard mask 7 as a mask to form a halftone film pattern 8; and a process of leaving the film decrease compensating light shielding film 9 in the light shielding band area in the periphery of the main circuit region 6 in eliminating the hard mask 7. COPYRIGHT: (C)2010,JPO&INPIT

Method of manufacturing halftone phase shift mask and method of manufacturing semiconductor device

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor capable of transferring stably with a high resolution all patterns that are formed on a reticle with various pitches. SOLUTION: The semiconductor device manufacturing method comprises the step of transferring patterns formed on the reticle to a semiconductor substrate by performing exposure using oblique incidence illumination, wherein in the step of performing the exposure using oblique incidence illumination, the exposure is performed using an aperture stop 16 in which a first orbicular-zone-shaped aperture 22 is formed, and a plurality of second apertures are formed around the first aperture 24a1-24a4. COPYRIGHT: (C)2007,JPO&INPIT

Semiconductor manufacturing method

PROBLEM TO BE SOLVED: To provide an exposure mask with a larger depth of focus than a conventional one, and to provide a method for manufacturing the mask and a method for manufacturing a semiconductor device using the exposure mask. SOLUTION: The exposure mask 24 comprises a quartz (transparent) substrate 20, a film 21 formed on the quartz substrate 20, a square main aperture 21a formed in the film 21, a rectangular first auxiliary aperture 21b in an unresolved size having a long side 21e opposing to one side 21d of the main aperture 21a, formed in the film 21 at some distance from the main aperture 21a, and a second auxiliary aperture 21c in an unresolved size formed in the film 21 and placed on a virtual extension line L of the diagonal line of the main aperture 21a. COPYRIGHT: (C)2007,JPO&INPIT

Exposure mask, method for manufacturing same, and method for manufacturing semiconductor device

PROBLEM TO BE SOLVED: To easily and surely attain even a fine pattern of a complicated shape which extends in each direction with a narrow width to a sufficiently satisfactory level by adapting to the particularity of the shape. SOLUTION: When a fine pattern with a predetermined narrow width, for example, a gate electrode extending in each direction is formed, as a light collecting optical system of the exposure apparatus, a filter mechanism 1 for controlling the transmitting state of illuminating light is adapted. The filter mechanism 1 includes a first light transmission area 2 of a ring shape and a pair of second light transmission areas 3a and 3b provided on the right and left portions within the ring, and the second light transmission areas 3a and 3b are higher in exposing light transmission rate than the first light transmission area 2. COPYRIGHT: (C)2011,JPO&INPIT

雄二説田

Papers

Exposure mask, mask pattern correction method, and semiconductor device

Method of manufacturing halftone phase shift mask and method of manufacturing semiconductor device

Semiconductor manufacturing method

Exposure mask, method for manufacturing same, and method for manufacturing semiconductor device

Method for manufacturing semiconductor device, and exposure apparatus

雄二 説田

Papers

Exposure mask, mask pattern correction method, and semiconductor device

Method of manufacturing halftone phase shift mask and method of manufacturing semiconductor device

Semiconductor manufacturing method

Exposure mask, method for manufacturing same, and method for manufacturing semiconductor device

Method for manufacturing semiconductor device, and exposure apparatus

雄二説田