An LED chip of the present invention has a structure in which an n-type semiconductor layer and a p-type semiconductor layer are successively formed on the lower face of an element substrate, with the p-type semiconductor layer being formed on an area except for an area for an n-electrode. A first n-electrode is formed on the area for the n-electrode and a first p-electrode is formed on the p-type semiconductor layer. A first insulating layer having openings and is formed on the first n-electrode and the first p-electrode, and a second n-electrode and a second p-electrode having virtually the same size are formed on the first insulating layer. With this arrangement, the electrode on the n-type semiconductor layer can be made larger, thereby a mounting process of LED chips onto a circuit board can be executed by using solder at low costs.

Semiconductor light emitting element, manufacturing method and mounting method of the same and light emitting device

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing short circuit of an electrode at the time of mounting on a supporting board SOLUTION: First and second electrodes (36, 37) are formed on the first surface of a semiconductor element (30) A supporting board (1) is arranged to face the first surface of the semiconductor element First and second lead-out electrodes (4, 5) are formed at positions facing the first and second electrodes, respectively, on the supporting board A dam film (14) is arranged on one opposing face of the supporting board and the semiconductor element First and second openings (15, 16) are formed at the positions corresponding to the first and second electrodes, respectively First connecting members (10, 38) pass through the first opening to connect the first electrode with the first lead-out electrode and do not fill the first opening fully Second connecting members (11, 39) pass through the second opening to connect the second electrode with the second lead-out electrode and do not fill the second opening fully COPYRIGHT: (C)2005,JPO&NCIPI

Semiconductor device and its manufacturing method

A light emitting diode is arranged on a sapphire substrate. The light emitting diode includes an n-GaN layer, an n-InGaN light-emitting layer, a p-AlGaN layer and a P-GaN layer, which are grown through vapor phase growth in this sequence. Within the p-GaN layer and p-AlGaN layer, 1×10 20 cm -3 of Mg and 2×10 19 cm -3 of Mg are contained, respectively. Within each of the n-GaN layer and n-InGaN light-emitting layer, 5×10 18 cm -3 of hydrogen is contained, thereby preventing Mg from diffusing therein from the p-GaN layer and p-AlGaN layer.

Compound semiconductor device with nitride

PROBLEM TO BE SOLVED: To provide a semiconductor chip whose handling is easy. SOLUTION: The semiconductor chip is provided with an n-type semiconductor layer where an n-electrode is formed on a substrate, and a p-type semiconductor layer where p-electrode is formed and in which bumps are formed on the n-electrode and the p-electrode. A resin seal is formed so that it substantially covers the chip except for the tips of the bumps and the lower face of the substrate, and the resin seal has a side vertical to the substrate.

Semiconductor chip and manufacturing method therefor

PURPOSE: A semiconductor LED(Light Emitting Diode) and a method for manufacturing the same are provided to be capable of improving light emitting efficiency by improving the structure of the semiconductor LED. CONSTITUTION: A semiconductor LED is provided with a transparent substrate(20), an epitaxial layer having a multilayer thin film structure, formed at one surface of the transparent substrate, wherein the epitaxial layer includes an active layer(32), the first and second film(31,33) formed at the upper and lower portion of the active layer and an N-type and P-type electrode(36,35) formed at the first and second film, respectively, a passivation film(37) and a protecting layer(21) formed at the lower portion of the epitaxial layer for protecting the epitaxial layer, and a plurality of metal electrodes(24,23) connected to the N-type and P-type electrode, respectively.

Semiconductor LED device and method thereof

PURPOSE:To realize a blue color light emitting device which facilitates the elimination of a short-circuit by a method wherein an insulating protective film is formed on n-type and p-type gallium nitride compound semiconductor layers except on the parts of a pair of electrode layers. CONSTITUTION:An LED chip 2 has a sapphire substrate 4 and a compound semiconductor layer. The compound semiconductor layer is composed of an n-type GaN layer 6, an n-type InGaN layer 8 and a p-type GaN layer 10 which are built up on the sapphire substrate 4 successively. An electrode layer 12 and an electrode layer 14 are provided on the p-type GaN layer 10 and the n-type GaN layer 6 respectively. The parts of the n-type InGaN layer 8 and the p-type GaN layer 10 are removed by etching. An insulating protective film 16 is formed over the exposed n-type GaN layer 6 and the remaining p-type GaN layer 10. A pair of lead frames 22 and 24 are bonded to the nickel and aluminum electrode layers 12 and 14 with conductive adhesive layers 18 and 20 therebetween respectively. With this constitution, the short-circuit between the electrodes can be eliminated by the insulating protective film 16 and a blue color light-emitting device having an improved reliability can be realized.

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Papers

Blue color light-emitting device and its manufacture

修二 中村

Papers

Blue color light-emitting device and its manufacture

修二中村