Electrical and optical properties of ZnO transparent conducting films by the sol-gel method

Transparent conducting ZnO:Al, In and Sn thin films deposited by the sol–gel method

The properties of ZnO films grown by molecular-beam epitaxy are reported. The primary focus was on understanding the origin of deep-level luminescence. A shift in deep-level emission from green to yellow is observed with reduced Zn pressure during the growth. Photoluminescence and Hall measurements were employed to study correlations between deep-level/near-band-edge emission and carrier density. With these results, we suggest that the green emission is related to donor-deep acceptor (Zn vacancy VZn−) and the yellow to donor-deep acceptor (oxygen vacancy, Oi−).

Origin of green luminescence in ZnO thin film grown by molecular-beam epitaxy

https://doc.rero.ch/record/9673/files/Fa_S._-_Low_pressure_chemical_vapour_deposition_of_ZnO_20080815.pdf

Y Kashiwaba

Papers

ZnO thin films prepared by remote plasma-enhanced CVD method

Hetero-epitaxial growth of ZnO thin films by atmospheric pressure CVD method