Processing, characterization and properties of copper-based composites strengthened by low amount of alumina particles

Spintronics is a promising technology which aims to solve the major problems existing in today’s conventional electronic devices. Realistically, this technology has the ability to combine the main functions of the modern semiconductor microelectronics and magnetic storage devices in single chip. Electrons have two fundamental degrees of freedom (DOF) called charge and spin. Conventional electronic devices used only the charge of electron for information processing using binary bits 0 and 1. The continuous developments in the conventional electronics are basically depending on reducing component size (transistors, capacitors, etc.) embedded in integrated circuits (random access memory, microprocessor, etc.). In 2019, the actual size of the transistor placed in commercial microprocessor is about 50 nm with gate length of 20 nm and node of 7 nm fabricated using TSMC’s 7-nm FinFET (Taiwan Semiconductor Manufacturing Company 7-nm Fin Field Effect Transistor). The progress in the electronic devices will come to the end when the transistor node size reaches to 1 nm. Below this size, the fabrication, writing, and reading processes will be difficult or impossible due to quantum size effect. Spintronics is the alternative future technology, which is based on using the fundamental spin of electron in additions to its charge to carry and store information. Transfer from conventional electronics to spintronics technology opens the possibilities to construct devices with high storage density, low power consummation, and fast operation and that are cheap and robust. The main aim of this work is to give a simple and clear picture to researchers who are beginners of research in this field. In this review, basic outlines of spintronics technology and its fundamental properties were discussed. Here, we highlight two groups of materials strongly candidates to fabricate spintronics devices, denoted diluted magnetic semiconductor and multiferroic materials.

Spintronics: Future Technology for New Data Storage and Communication Devices

Mechanical Alloying of Immiscible Metallic Systems: Process, Microstructure, and Mechanism

Phase evolution and origin of the high piezoelectric properties in lead-free BiFeO3–BaTiO3 ceramics

Surface microstructure and properties of Cu-C powder metallurgical alloy induced by high-current pulsed electron beam

Microstructures and formation mechanism of W–Cu composite coatings on copper substrate prepared by mechanical alloying method

Effects of Cu content and mechanical alloying parameters on the preparation of W–Cu composite coatings on copper substrate

Tuning the dielectric, ferroelectric and electromechanical properties of Ba0.83Ca0.10Sr0.07TiO3–MnFe2O4 multiferroic composites

Investigation of structural, ferroelectric and magnetic properties of Ca modified BiFeO3–BaTiO3 ceramics

Enhanced magnetic, ferroelectric and optical properties of Sr and Co co-doped BiFeO3 powders

Y. Li

Papers

Microstructures and formation mechanism of W–Cu composite coatings on copper substrate prepared by mechanical alloying method

Effects of Cu content and mechanical alloying parameters on the preparation of W–Cu composite coatings on copper substrate

Tuning the dielectric, ferroelectric and electromechanical properties of Ba0.83Ca0.10Sr0.07TiO3–MnFe2O4 multiferroic composites

Investigation of structural, ferroelectric and magnetic properties of Ca modified BiFeO3–BaTiO3 ceramics

Enhanced magnetic, ferroelectric and optical properties of Sr and Co co-doped BiFeO3 powders