The present invention provides a plasma CVD method for forming a plasma from a deposition material gas by application of an electric power, and thereby forming a film on a deposition target object in the plasma, wherein the formation of the plasma from the material gas is performed by applying an RF power and a DC power, and the DC power is applied to an electrode carrying the deposition target object. The present invention also provides a plasma CVD apparatus for forming a plasma from a deposition material gas by applying an electric power from the power applying means, and thereby forming a film on a deposition target object by exposing the deposition target object to the plasma, wherein the power applying means includes RF power applying means and DC power applying means, and the DC power applying means applies an electric power to the electrode carrying the deposition target object.

Plasma-CVD method and apparatus

A plasma processing method in which a high-frequency power is supplied to a processing chamber in which an object to be processed is mounted, thereby producing a plasma in the processing chamber, and the object is processed in an atmosphere of the plasma, wherein the high-frequency power is subjected to modulation by a low-frequency power. In one embodiment a plasma is produced in a processing chamber by using an electric power with a direction of current changed with passing of time, and the object to be processed is processed in an atmosphere of the plasma, wherein a power having a basic frequency is subjected to frequency modulation with a frequency equal to n-times (n=an integer) the basic frequency. In a plasma processing apparatus of the invention, while a process gas is supplied to a processing chamber via a first gas introducing hole formed in an electrode, an object to be processed, which is held on an opposed electrode, is subjected to plasma processing. There is provided a resistance applying [means for applying] apply resistance to the process gas flowing to the processing chamber via the gas introducing hole from the gas introducing means such that a plasma discharge is prevented from occurring in the gas introducing means when a process pressure in the processing chamber is set at 0.5 Torr or less.

Plasma processing method and plasma processing apparatus

A photovoltaic device and related methods. The device has a nanostructured material positioned between an electron collecting electrode and a hole collecting electrode. An electron transporting/hole blocking material is positioned between the electron collecting electrode and the nanostructured material. In a specific embodiment, negatively charged carriers generated by optical absorption by the nanostructured material are preferentially separated into the electron transporting/hole blocking material. In a specific embodiment, the nanostructured material has an optical absorption coefficient of at least 103 cm-1 for light comprised of wavelengths within the range of about 400 nm to about 700 nm.

Method and structure for thin film photovoltaic materials using bulk semiconductor materials

The effects of forming gas annealing (FGA) on the ferroelectric properties of Hf0.5Zr0.5O2 (HZO) films were examined. Although the H-incorporation during FGA degrades the ferroelectric properties of Hf0.5Zr0.5O2 films, the degree of degradation was much lower compared with other ferroelectrics, such as Pb(Zr,Ti)O3. Pt worked as a catalyst for H-incorporation, and maximum 2Pr loss of ∼40% occurred. However, the insertion of a ∼20-nm-thick TiN layer between Pt and Hf0.5Zr0.5O2 decreased the degradation to ∼12%. Hf0.5Zr0.5O2 is more resistant to degradation by FGA compared with the conventional ferroelectrics, which is a highly promising result for next-generation ferroelectric memory.

Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes

A hard film for cutting tools which is composed of (Ti1-a-b-c-d, Al a, Cr b, Si c, B d) (C l-e N e) 0.5 <= a <= 0.8, 0.06 <= b, 0 <<= c <= 0.1, 0 <= d <= 0.1, 0 <= c+d <= 0.1, a+b+c+d < 1, 0.5 <= e <= 1 (where a, b, c, and d denote respectively the atomic ratios of Al, Cr, Si, and B, and a denotes the atomic ratio of N).

Hard film for cutting tools, cutting tool coated with hard film, process for forming hard film, and target used to form hard film

A number of investigations have successfully represented the beneficial effects of ion implantation in improving the corrosion resistance of metals. In this paper, we review studies on improving the corrosion resistance of titanium by co-implantation with metal ions. These studies have demonstrated that co-implantation is a possible process for attaining excellent corrosion protection of titanium against aggressive environments. The electrochemical behavior of titanium implanted with tantalum, molybdenum, nickel ions, or combinations of two of these ions, have been investigated in boiling sulfuric acid solution. The polarization curves of tantalum-implanted titanium are similar to that of unimplanted titanium, showing the active region followed by passivation. However, anodic polarization current densities are considerably decreased in the active and passive regions, and tantalum implantation suppresses the dissolution of titanium. The corrosion potentials of titanium implanted with nickel or molybdenum are shifted in the noble direction with an increase in fluence, and reside in the passive region of titanium at higher fluences. No significant change is observed in the passive current densities. Nickel and molybdenum implantation preferentially promotes the passivation of titanium in such an aggressive environment. These effects are diminished in a relatively short-term immersion. Titanium implanted with a combination of molybdenum and tantalum ions, or a combination of tantalum and nickel ions, exhibits stable passivation behavior with low passive current densities. The corrosion rate estimated from the polarization curves is approximately 0.1 mm year−1 for co-implantation with tantalum and nickel ions. Co-implantation provides long-term protection for immersion. The outstanding corrosion resistance of titanium is achieved by the complementary effect of co-implantation with these metal ions.

Improvement of corrosion resistance of titanium by co-implantation

The purpose is to provide a joined body of dissimilar materials comprising steel material and aluminum material, which can be obtained by spot welding with high joining strength; and a spot welding method therefor. A joined body (3) is obtained by spot welding a particular thick steel material (1) and an aluminum material (2). The area of a nugget (5) in a spot weld is determined in relation to the plate thickness of the aluminum material (2). The area of the portion of a boundary reaction layer (6) having a thickness of 0.5-10 μm in the nugget (5) is determined in relation to the plate thickness of the aluminum material (2), and high joining strength is obtained.

Joined body of dissimilar materials comprising steel material and aluminum material, and joining method therefor

A hard coating formed on a substrate material and having a first layer and a second layer of which, the first layer is a compound composed of one or more types of metallic elements selected to include at least aluminum or titanium from a group comprising aluminum, titanium and silicon; and also selected from one or more types of non-metallic elements from a group comprising boron, carbon and nitrogen, and the second layer is a lamination of AlBN on the surface.

Hard coating of excellent wear resistance and hard coating coated member thereof

PROBLEM TO BE SOLVED: To provide a joined body of a steel material and an aluminum material which is formed by spot welding and has a high joining strength, and also to provide a method for spot welding the same. SOLUTION: The joined body 3 of different materials is formed of the steel material 1 and the aluminum material 2 joined to the steel material through spot welding. The steel material 1 contains 0.1-3.0 wt.% Mn and has a sheet thickness t 1 of 0.3-2.5 mm. The aluminum material 2 contains 0.4-2 wt.% Si and has a sheet thickness t 2 of 0.5-2.5 mm. A plating film 4 made of Zn and/or Al having a film thickness of 3-15 μm and a melting point of 350-950°C is preliminarily formed on a surface of the steel material 1 or the aluminum material 2. A nugget diameter in the spot welding is within a range of 4×t 2 0.5 to 7×t 2 0.5 in relation to the sheet thickness t 2 . COPYRIGHT: (C)2006,JPO&NCIPI

Joined body of different materials of steel material and aluminum material and method for joining the same

PROBLEM TO BE SOLVED: To provide an Al-Mg-Si Al alloy sheet which can be produced without using a high purity Al matrix and has excellent toughness and bendability. SOLUTION: This Al alloy sheet consists of, by mass, 0.1 to 2.0% Mg, 0.1 to 2.0% Si and 0.1 to 1.5% Fe or further <=2.0% Cu, and the balance Al as essential components. The Fe-Si based compound or Fe-Si-Cu based compound in the structure is defined so that the maximum grain size diameter (in the case of being incorporated with Cu) is <=5 μm, the maximum aspect ratio is <=5, and the average crystal grin size is <=30 μm. The Al alloy sheet is excellent in toughness and bendability and is suitably used, e.g. as an automotive panel material.

Yasuaki Sugizaki

Papers

Improvement of corrosion resistance of titanium by co-implantation

Joined body of dissimilar materials comprising steel material and aluminum material, and joining method therefor

Hard coating of excellent wear resistance and hard coating coated member thereof

Joined body of different materials of steel material and aluminum material and method for joining the same

Al-Mg-Si SERIES Al ALLOY SHEET EXCELLENT IN TOUGHNESS AND BENDABILITY