An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Enhancement mode, field effect transistors wherein at least a portion of the transistor structure may be substantially transparent. One variant of the transistor includes a channel layer comprising a substantially insulating, substantially transparent, material selected from ZnO, Sn02, or In203. A gate insulator layer comprising a substantially transparent material is located adjacent to the channel layer so as to define a channel layer/gate insulator layer interface. A second variant of the transistor includes a channel layer comprising a substantially transparent material selected from substantially insulating ZnO, Sn02or In2O3, the substantially insulating ZnO, Sn02, or In203 being produced by annealing. Devices that include the transistors and methods for making the transistors are also disclosed.

Transistor structures and methods for making the same

The present invention provides for sequential chemical vapor deposition by employing a reactor operated at low pressure, a pump to remove excess reactants, and a line to introduce gas into the reactor through a valve. A first reactant forms a monolayer on the part to be coated, while the second reactant passes through a radical generator which partially decomposes or activates the second reactant into a gaseous radical before it impinges on the monolayer. This second reactant does not necessarily form a monolayer but is available to react with the monolayer. A pump removes the excess second reactant and reaction products completing the process cycle. The process cycle can be repeated to grow the desired thickness of film.

Sequential chemical vapor deposition

In fabricating a thin film transistor, an active layer comprising a silicon semiconductor is formed on a substrate having an insulating surface Hydrogen is introduced into The active layer A thin film comprising SiO x N y is formed to cover the active layer and then a gate insulating film comprising a silicon oxide film formed on the thin film comprising SiO x N y  Also, a thin film comprising SiO x N y is formed under the active layer The active layer includes a metal element at a concentration of 1×10 15 to 1×10 19 cm −3 and hydrogen at a concentration of 2×10 19 to 5×10 21 cm −3 

Semiconductor device and method for forming the same

Disclosed are a liquid crystal display device which reduces the number of masks and improves an aperture ratio, and a method for fabricating the same. The liquid crystal display device includes gate and data lines perpendicularly intersecting on a substrate having pixel and pad parts; a thin film transistor on the substrate at the intersection of the gate and data lines; a pixel electrode on the substrate at the pixel part and connected directly to a drain electrode of the thin film transistor; an insulating film on the overall surface of the substrate including the pixel electrode and the thin film transistor; an organic film on the insulating film over the thin film transistor and the data line; and a common electrode of slit shapes overlapping the pixel electrode such that the insulating film is interposed between the common electrode and the pixel electrode.

Liquid crystal display device and method for fabricating the same

A method of manufacturing an active matrix display device, in which particular emphases are laid on the forming step of an insulation layer by the ALE method and the precedent and subsequent steps thereof, thereby insulation layer being anyone among gate insulation layer, inter-busline insulation layer, protection layer and auxiliary capacitor insulation layer comprised in the display device. The method of forming the insulation layer comprises the predetermined number of repeated cycles of the steps of subjecting a substrate to the vapor of a metal inorganic/organic compound, which can react with H 2 O and/or O 2 and form the metal oxide, under molecular flow condition for duration of depositing almost a single atomic layer, and next subjecting the surface of thus formed metal inorganic/organic compound layer to the H 2 O vapor and/or O 2 gas under molecular flow condition for duration of replacing the metal inorganic/organic compound layer to the metal oxide layer. The subsequent steps after forming of the insulation layer include deposition steps of silicon nitride and amorphous silicon layers using the same plasma CVD apparatus. The molecular flow condition is obtained by maintaining the pressure in a reaction chamber within a range between 1 and several tens of milli-Torr.

Method of manufacturing active matrix display device using insulation layer formed by the ale method

PURPOSE: To prevent occurrence of a gap between a channel protection film and source and drain electrodes by a method wherein a method of anisotropic dry etching proceeding straight vertically is applied to the surface of the channel protection film with a resist film used as a mask, an overhanging part of the resist film is removed subsequently, a process of film formation for forming the source and drain electrodes is applied and then the resist film is removed. CONSTITUTION: An SiO 2 film 4 is etched by applying a method of anisotropic dry etching having a straight-proceeding property, with a resist film 5 having a shape of an overhang used as a mask. During this process, not only the part of the SiO 2 film 4 covered up with the resist film 5, but also the part thereof around said part shaded with the overhang is masked. Therefore it is formed in the shape of the peripheral edge part being exposed. Reactive ion etching being applied to the resist film 5 subsequently, the top part of the resist film 5 is removed thereby in a prescribed thickness and the overhang is removed. Next, an n + a-Si film 6 and a Ti film 7 are formed as a contact layer and a source-drain electrode film respectively and they are connected also on the exposed peripheral edge part of the SiO 2 film 4. Accordingly, the end parts of a source electrode S and a drain electrode D overlap with the peripheral edge part of the SiO 2 film 4 and no gap takes place between them. COPYRIGHT: (C)1990,JPO&Japio

Manufacture of thin film transistor

A first sheet of photomask is used when a gate electrode and a gate bus line are formed, a second sheet of photomask is used when patterning is applied to a semiconductor film which becomes an active layer of a transistor on the gate electrode, a third sheet of photomask is used when a pixel electrode, a source electrode, a drain electrode, a drain bus line and a drain bus terminal portion are formed, and a fourth sheet of photomask is used when a film on the drain bus terminal portion, the gate bus terminal portion and pixel portion is removed, thereby to form thin film transistors arranged in a matrix form.

Method of manufacturing thin film transistors in a liquid crystal display apparatus

PURPOSE: To reduce the man-hours of manufacture and to improve the operability by moving an ink jet head while controlling the injection of ink from the head. CONSTITUTION: The ink jet head 2 is movable in a plane parallel to a substrate and while the head 2 is moved, ink color particles from the ink injection opening 2a is brought under injection control to draw a pattern on the substrate with color ink. Thus, the movement of the head 2 and the flight of ink particles are controlled to draw the color pattern in specific color on the substrate. When a pattern is drawn in three primary colors, said process is performed three times by using the different colors, and an ink jet mechanism which has three ink injection openings 2a corresponding to the three primary colors is used for the head to manufacture the color filter by performing the drawing process only once. Further, the trouble of blurring is solved by providing a bank 6 which has a step except in a pattern on the substrate previously by using a dielectric film of silicon oxide, etc. COPYRIGHT: (C)1988,JPO&Japio

Color filter forming method

PURPOSE: To provide the novel thin-film transistor(TFT) matrix device which can decrease the damages of an insulating film for storage capacities in an etching stage at the time of forming the TFTs and the process for production of the device. CONSTITUTION: This TFT matrix device has a gate electrode layer 11 connected to gate bus lines, a gate insulating layer 12 laminated on the gate electrode layer, a semiconductor layer 13 including an active layer disposed in contact with the gate insulating layer and a pair of contact layers thereon, a protective film 14 covering the active layer of the semiconductor layer, a source electrode layer 16 connecting one of the contact layers to signal bus lines and a drain electrode layer 17 connecting the other of the contact layers to picture element electrodes 18. The device has an insulating layer 22 constituting the layer common with the gate insulating layer on the storage capacity electrodes in the intersected regions of the storage capacity electrodes 21 and the picture element electrodes and a protective layer 24 which is disposed thereon and constitute the layer common with a part of the other layer forming the TFTs. COPYRIGHT: (C)1993,JPO&Japio

Yasuhiro Nasu

Papers

Method of manufacturing active matrix display device using insulation layer formed by the ale method

Manufacture of thin film transistor

Method of manufacturing thin film transistors in a liquid crystal display apparatus

Color filter forming method

Thin-film transistor matrix device and its production