Circuit modules and methods of construction thereof that contain composite meta-material dielectric bodies that have high effective values of real permittivity but which minimize reflective losses, through the use of host dielectric (organic or ceramic), materials having relative permittivities substantially less than ceramic dielectric inclusions embedded therein. The composite meta-material bodies permit reductions in physical lengths of electrically conducting elements such as antenna element(s) without adversely impacting radiation efficiency. The meta-material structure may additionally provide frequency band filtering functions that would normally be provided by other components typically found in an RF front-end.

Ceramic antenna module and methods of manufacture thereof

An object of the present invention is to provide an EL display device having a high operation performance and reliability. The switching TFT 201 formed within a pixel has a multi-gate structure, which is a structure which imposes an importance on reduction of OFF current value. Further, the current control TFT 202 has a channel width wider than that of the switching TFT to make a structure appropriate for flowing electric current. Morever, the LDD region 33 of the current control TFT 202 is formed so as to overlap a portion of the gate electrode 35 to make a structure which imposes importance on prevention of hot carrier injection and reduction of OFF current value.

Electro-Optical Device and Electronic Device

An object of the present invention is to provide an EL display device having high operation performance and reliability. A third passivation film 45 is disposed under the EL element 203 comprising a pixel electrode (anode) 46, an EL layer 47 and a cathode 48, and diffusion of alkali metals from the EL element 203 formed by ink jet method into TFTs is prevented. Further, the third passivation film 45 prevents penetration of moisture and oxygen from the TFTs, and suppress degradation of the EL element 203 by dispersing the heat generated by the EL element 203.

Method for manufacturing an electro-optical device

A semiconductor device that uses a high reliability TFT structure is provided. The gate electrode of an n-channel type TFT is formed by a first gate electrode and a second gate electrode that covers the first gate electrode. LDD regions have portions that overlap the second gate electrode through a gate insulating film, and portions that do not overlap. As a result, the TFT can be prevented from degradation in an ON state, and it is possible to reduce the leak current in an OFF state.

Electro-optical device and manufacturing method thereof

An electrical component provides a ceramic element located on or in a dielectric substrate between and in contact with a pair of electrical conductors, wherein the ceramic element includes one or more metal oxides having fluctuations in metal-oxide compositional uniformity less than or equal to 1.5 mol % throughout the ceramic element. A method of fabricating an electrical component, provides or forming a ceramic element between and in contact with a pair of electrical conductors on a substrate including depositing a mixture of metalorganic precursors and causing simultaneous decomposition of the metal oxide precursors to form the ceramic element including one or more metal oxides.

Electrical components and method of manufacture

A metal oxide film resistor having an insulating base material, and a metal oxide resistance film and/or a metal oxide insulating film comprising at least a metal oxide film of which the resistance temperature coefficient is a positive value and/or a metal oxide film of which the resistance temperature coefficient is a negative value. This metal oxide film resistor is highly reliable and not influenced by water and alkali ions in the insulating material. The resistance value of the film does not change.

Metal oxide film resistor

A current detecting resistor for detecting the current value of a conducted circuit as a voltage value and capable of guaranteeing the measurement of the resistance value with high accuracy compensating for the deviation of the measurement position of a resistance value measuring terminal. The resistor has a metallic platy resistor body (11), and separate metallic terminals (12 and 13) electrically connected to both end sections of the resistor body (11) and the terminals (12 and 13) are constituted of a material having electrical conductivity equal to or higher than that of the resistor body (11), so that the proportion of the resistance values of the terminal (12 and 13) in the whole resistance value of the resistor may become smaller and the influence of the fluctuation of the resistance value caused by the deviation of the measurement position of a resistance value measuring terminal may become negligible.

Resistor and method for manufacturing the same

The invention is directed to the electrode structure of a chip type component, such as a chip resistor, in which a plated film of low melting point metal is used as an outermost coating electrode film on the electrode portion, the layer underlying said plated film of low melting point metal on the electrode portion is formed of a metal material having a higher melting point than that of the plated film and also having good affinity with said plated film, and the electrode material comprising said plated film of low melting point metal is subjected to heat treatment at a temperature higher than the melting point thereof, so that the outermost surface of the electrode portion is coated with a remolten metal film.

Chip type component

The present invention relates to the resistors used for detecting current in a current-carrying circuit as a voltage, and aims to provides a resistor which assures highly accurate measurement of resistance even if the measuring point is not precisely placed To obtain the above purpose, the resistor of the present invention comprises a sheet metal resistor element (11) and separate metal terminals (12),(13) electrically connected to both ends of the sheet resistor element(11) These terminals (12),(13) are made of metal having the same or greater electrical conductivity than that of the resistor element (11) With the above configuration, resistance of the terminals can be made smaller than that of the resistor element This enables to reduce the proportion of resistance of the terminals in the entire resistor, allowing to ignore its effect on fluctuation of resistance due to deviation in measuring points of a resistance measuring terminal

Low-resistance resistor and its manufacturing method

PROBLEM TO BE SOLVED: To make a resistor easily manufacturable even when the resistance value of the resistor is lowered by constituting the resistor of a resistance element and terminals which are integrally formed at both end sections of the element and have thicknesses larger than the element and widths equivalent to or broader than that of the element forming the terminals and resistance element of one metallic sheet. SOLUTION: A resistance element 11 and terminals 12 which are integrally formed at both end sections of the element 11 and have thicknesses larger than that of the element 11 widths equivalent to or broader than that of the element 11 is formed of one metallic sheet. Only one resistance value correcting slit 13 is provided in the side section of the element 11, Then an insulating material 14 composed of an epoxy resin, polyester resin, polyether imide resin, liquid crystal polymer, etc., is provided so as to cover the surface of the element 11. In addition, the total thickness of the element 11 and insulating material 14 is adjusted to a value which is equivalent to or thinner than that of the terminals 12. A metallic coating material 15 composed of a metallic material, such as gold, silver, nickel, palladium, solder, tin, etc., is provided so as to cover the terminals 12.

Yasuhiro Shindo

Papers

Metal oxide film resistor

Resistor and method for manufacturing the same

Chip type component

Low-resistance resistor and its manufacturing method

Resistor and its manufacture