A positive resist composition comprising: at least one compound selected from a compound capable of generating an acid represented by the formula (I) as defined herein upon irradiation with actinic rays or radiation and a compound capable of generating an acid represented by the following formula (II) upon irradiation with actinic rays or radiation; and a compound capable of generating an acid represented by the formula (III) as defined herein upon irradiation with actinic rays or radiation.

Positive resist composition and pattern-forming method using the same

A resist composition is provided comprising a silicone resin, a photoacid generator, a nitrogen-containing organic compound, and a solvent. The silicone resin is obtained through cohydrolytic condensation of a mixture of three silane monomers containing an organic group having a hydroxyl group and having at least 3 fluorine atoms, in total, on a proximate carbon atom, an organic group having a carboxyl group protected with an acid labile group, and a lactone ring-bearing organic group, respectively. The resist composition has satisfactory resolution and overcomes the problem of a low selective etching ratio between resist film and organic film during oxygen reactive etching.

Resist composition and patterning process

A positive resist composition having excellent size controllability, and a resist pattern forming method are provided. This positive resist composition contains a resin component (A) comprising an alkali soluble constituent unit (a1) which comprises a constituent unit (a11) derived from (α-methyl)hydroxystyrene, and a constituent unit (a2) which has an acid dissociable dissolution inhibiting group including an acid dissociable dissolution inhibiting group (II) represented by the following general formula (II) and/or a specific chain acid dissociable dissolution inhibiting group (III); an acid generator component (B) which generates an acid upon exposure; and preferably contains an aromatic amine (C).

Positive resist composition and resist pattern forming method

Provided are methods of trimming photoresist patterns. The methods involve coating a photoresist trimming composition over a photoresist pattern, wherein the trimming composition includes a matrix polymer, a free acid having fluorine substitution and a solvent, the trimming composition being free of cross-linking agents. The coated semiconductor substrate is heated to cause a change in polarity of the resist polymer in a surface region of the photoresist pattern. The photoresist pattern is contacted with a developing solution to remove the surface region of the photoresist pattern. The methods find particular applicability in the formation of very fine lithographic features in the manufacture of semiconductor devices.

Photoresist pattern trimming methods

A resist composition used in a method of forming a resist pattern including applying a resist composition comprising a base component that exhibits increased solubility in an alkali developing solution and a photo-base generator component to a substrate to form a resist film; subjecting the resist film to exposure; baking after subjecting the resist film to exposure, wherein at an exposed portion of the resist film, the base generated from the photo-base generator component upon exposure and an acid provided to the resist film in advance are neutralized, and at an unexposed portion of the resist film, the solubility of the base component in an alkali developing solution is increased by the action of acid provided to the resist film in advance; and subjecting the resist film to alkali development, thereby forming a negative-tone resist pattern.

Resist composition and method of forming resist pattern

PROBLEM TO BE SOLVED: To provide a pattern forming method useful for forming a fine pattern. SOLUTION: The pattern forming method has: the step (1) of applying a first chemically amplified positive resist composition on a support to form a first resist film, subject it to exposure, perform PEB, and perform alkali development to form a first resist pattern; the step (2) of applying a second film forming material on the support, on which the first resist pattern is formed, to form a second film, subject a region containing the position where the first resist pattern is formed to exposure, perform PEB, and perform alkali development. As the second film forming material, a material which contains organic solvent that does not dissolve the first resist layer, and of which solubility does not increase in relation to an alkali developing agent with an amount of energy equal to or smaller than that of the first chemically amplified positive resist composition is used. In the step (2), the exposure amount and PEB temperature are set so that only the first resist pattern in the exposed region is removed by the alkali development. COPYRIGHT: (C)2011,JPO&INPIT

Pattern forming method

A resist composition including a base component (A) that exhibits changed solubility in an alkali developing solution under the action of acid, and an acid generator component (B) that generates acid upon exposure, wherein the acid generator component (B) includes an acid generator (B1) consisting of a compound represented by general formula (b1-2) shown below: [Chemical Formula 1] A+Z− (b1-2) wherein A+ represents an organic cation; and Z− represents an anionic cyclic group, wherein the cyclic group includes an ester linkage within the ring structure, two mutually different groups are bonded to the ring structure, one of these groups includes an ester linkage in which a carbon atom that constitutes part of the ester linkage is bonded directly to the ring structure, and the other group includes an anion moiety.

Novel compound and method of producing the same, acid generator, resist composition and method of forming resist pattern

A positive resist composition comprising a resin component (A) whose alkali solubility can be increased by the action of an acid and an acid generator component (B) which can generate an acid upon being exposed to light, wherein the resin component (A) comprises a copolymer (A1) having a constituent unit (a1) represented by the general formula (II) or a polymer (A2) having a constituent unit (a1) represented by the general formula (II) [wherein R represents a hydrogen atom, a halogen atom, a lower alkyl group, or a halogenated lower alkyl group; and R1 to R3 independently represent an alkyl group, or a fluorinated alkyl group, provided that, in the fluorinated alkyl group, no fluorine atom is attached to a carbon atom adjacent to a tertiary carbon atom to which R1 to R3 are bonded, at least one of R1 to R3 represents the above-mentioned fluorinated alkyl group, and R2 and R3 may together form a ring structure.]

Positive resist composition and method for formation of resist pattern

PROBLEM TO BE SOLVED: To provide a resist composition suitable for immersion exposure and to provide a method for forming a resist pattern using the resist composition. SOLUTION: The positive resist composition for immersion exposure contains: a fluorine-containing polymer compound (F1) having a structural unit (f1) including a base-dissociative group and a structural unit (f2) expressed by general formula (f2-1) [where R represents a hydrogen atom or a 1-5C alkyl or 1-5C halogenated alkyl group, and W represents a group including a polycyclic aliphatic cyclic group]; a base component (A) having the solubility with an alkali developing solution increased by an action of an acid; and an acid generator component (B) generating an acid by exposure. COPYRIGHT: (C)2010,JPO&INPIT

Positive resist composition for immersion exposure and method for forming resist pattern using the same

PROBLEM TO BE SOLVED: To provide a resist composition containing an acid generator comprising a compound suitable as an acid generator for the resist composition, and a resist pattern forming method to use the resist composition. SOLUTION: The resist composition contains (A) a base material component whose solubility to an alkali developer changes by action of an acid and (B) an acid generator component containing an acid generator (B1) comprising a compound expressed by general formula (b1-1) and generating an acid by light exposure. In the formula, R 7" to R 9" are each independently aryl or alkyl; any two groups among R 7" to R 9" may be bonded together, to form a ring, with a sulfur atom in the formula; at least one of R 7" to R 9" is substituted aryl wherein a part of or all hydrogen atoms are substituted with alkoxyalkyloxy or alkoxycarbonylalkyloxy; R 1 is 4-20C cyclic alkyl having oxygen atom (=O) as a substituent; and n' is 0 or 1. COPYRIGHT: (C)2010,JPO&INPIT

Yasuhiro Yoshii

Papers

Pattern forming method

Novel compound and method of producing the same, acid generator, resist composition and method of forming resist pattern

Positive resist composition and method for formation of resist pattern

Positive resist composition for immersion exposure and method for forming resist pattern using the same

Compound, acid generator, resist composition and resist pattern forming method