A multi charged particle beam writing method includes performing ON/OFF switching of a beam by an individual blanking system for the beam concerned, for each beam in multi-beams of charged particle beam, with respect to each time irradiation of irradiation of a plurality of times, by using a plurality of individual blanking systems that respectively perform beam ON/OFF control of a corresponding beam in the multi-beams, and performing blanking control, in addition to the performing ON/OFF switching of the beam for the each beam by the individual blanking system, with respect to the each time irradiation of the irradiation of the plurality of times, so that the beam is in an ON state during an irradiation time corresponding to irradiation concerned, by using a common blanking system that collectively performs beam ON/OFF control for a whole of the multi-beams

Multi charged particle beam writing method and multi charged particle beam writing apparatus

A method for acquiring a settling time includes forming, using a deflector, a reference pattern so that a deflection movement amount of the beam may be smaller than an evaluation deflection movement amount; forming, while variably setting the settling time of the DAC amplifier, an evaluation pattern such that both ends of the width dimension of the evaluation pattern being the same design width dimension as that of the reference pattern, for each of times set variably, such that a deflection movement amount of a second beam shot of two beam shots successively shot is equivalent to the evaluation deflection movement amount; calculating a difference between the width dimension of the evaluation pattern concerned and that of the reference pattern, for each of the times set variably; and acquiring a settling time of the DAC amplifier necessary for the deflection movement amount, using the difference

Method for acquiring settling time

The invention relates to a method for performing charged particle beam proximity effect correction, comprising the steps of: receiving a digital layout pattern to be patterned onto a target using one or more charged particle beams; selecting a base proximity function comprising a sum of an alpha and a beta proximity function, wherein said alpha proximity function models a short range proximity effect and said beta proximity function models a long range proximity effect, wherein a constant η is defined as a ratio between the beta proximity function and the alpha proximity function in said sum, with 0 < η <1; determining a modified proximity function which corresponds to said base proximity effect function wherein the alpha proximity function has been replaced by a Dirac delta function, and using an electronic processor, performing a deconvolution of the digital layout pattern with the modified proximity function to produce a corrected layout pattern.

Proximity effect correction in a charged particle lithography system

In one embodiment, a charged particle beam drawing apparatus includes a drawing unit that draws a pattern in a drawing area on a substrate and a control processing circuitry that controls the drawing unit via a process including receiving drawing data with a hierarchical correction map input to the control processing circuitry. The drawing data with the hierarchical map includes a plurality of files in which division maps are respectively described in files in units of subframes. Each division map includes dose correction information associated with corresponding one of blocks of the drawing area. The process further includes generating shot data by performing a data conversion process on the drawing data, reading a division map corresponding to a block in the area to be drawn from the hierarchical correction map, calculating a dose, and controlling the drawing unit based on the shot data and the calculated dose.

Charged particle beam drawing apparatus and drawing data generation method

In one embodiment, a data generating apparatus generates data including an irradiation amount of a beam in each pixel for an energy beam writing apparatus. The data generating apparatus includes a target irradiation amount calculating section configured to calculate a first irradiation amount in each pixel, an irradiation amount rounding section configured to round the first irradiation amount based on an irradiation amount control unit and calculate a second irradiation amount, a difference calculating section configured to calculate a first difference between the first irradiation amount and the second irradiation amount, a difference sum calculating section configured to calculate a sum of the first differences in a first group of a plurality of adjacent pixels, and an allocating section configured to allocate an irradiation amount based on the irradiation amount control unit and the sum to a pixel in the first group.

Data generating apparatus, energy beam writing apparatus, and energy beam writing method

A charged particle beam writing apparatus according to one aspect of the present invention includes a calculation unit to calculate a dose density that corrects a dimensional variation caused by at least one of a proximity effect, a fogging effect, and a loading effect, and indicates a dose per unit area of a charged particle beam, where the dose density has been modulated based on a dose modulation amount input from outside, a determination unit to determine whether the dose density exceeds an acceptable value, and a writing unit to write a pattern on a target object with the charged particle beam.

Charged particle beam writing apparatus and charged particle beam dose check method

A apparatus includes a unit to operate a first dose of a beam corrected for a proximity effect for each of second mesh regions of a second mesh size obtained by dividing the first mesh size by a product of a natural number and a number of passes, by using a dose model using a dose threshold; a unit to operate a representative temperature rising due to heat transfer originating from irradiation of the beam by using a dose for an applicable pass of the first dose and a unit to operate a polynomial having a term obtained by multiplying a dose modulation coefficient based on the representative temperature by a pattern area density as an element, and a dose that makes a difference between a value obtained by operating the polynomial and the dose threshold within a tolerance is used.

Charged particle beam writing apparatus and method for acquiring dose modulation coefficient of charged particle beam

A charged particle beam writing apparatus according to one aspect of the present invention includes: a first mesh division unit configured to virtually divide a pattern writing region of a target object into a plurality of first mesh regions in a first mesh size; a second mesh division unit configured to virtually divide the pattern writing region of the target object into a plurality of second mesh regions in a second mesh size obtained by dividing the first mesh size by a product of a natural number and a number of passes of multiple pattern writing performed by shifting a position; a first dose calculation unit configured to calculate a dose of a charged particle beam with corrected proximity effect for each of the plurality of second mesh regions by using a dose model using a dose threshold; a representative temperature calculation unit configured to calculate a representative temperature of the first mesh region rising due to heat transfer originating from irradiation of the charged particle beam by using a dose for an applicable pass of the multiple pattern writing of the calculated dose, for each pass of the multiple pattern writing and each of the plurality of first mesh regions; a polynomial calculation unit configured to calculate a polynomial having a term obtained by multiplying a dose modulation coefficient based on the representative temperature of each pass by a pattern area density for each of the plurality of second mesh regions as an element; and a pattern writing unit configured to write a pattern on the target object by using a charged particle beam of a dose of which the difference between a value obtained by calculating the polynomial and the dose threshold is within a tolerance value.

Charged particle beam writing device and method for acquiring dose modulation coefficient

A charged particle beam painting device of an embodiment of the present invention comprises a calculating part revising a size change caused by at least one among a close effect, a fogging effect, and a loading effect and calculating dosage density indicating the dosage per unit area of a dos-modulated charged particle beam modulated by a dos-modulation amount inputted from the outside, a determining part determining whether the dosage density exceeds an allowance, and a painting part painting patterns on a sample by using the charged particle beam.

Particle beam writing device and method for checking exposure of particle beam

Eine Vorrichtung enthalt eine Einheit zum Betreiben einer ersten Dosis eines Strahls, der korrigiert worden ist fur einen Proximity-Effekt fur jede zweiter Maschenregionen einer zweiten Maschengrose, die erhalten worden ist durch Teilen der ersten Maschengrose durch ein Produkt einer naturlichen Zahl und einer Anzahl von Durchlaufen, durch Verwenden eines Dosismodells mit Verwendung einer Dosisschwelle; eine Einheit zum Betreiben einer reprasentativen Temperatur, die aufgrund eines Warmetransfers ansteigt, der von einer Bestrahlung des Strahls abstammt, durch Verwenden einer Dosis fur einen anwendbaren Durchlauf der ersten Dosis, und eine Einheit zum Betreiben eines Polynoms mit einem Term, der erhalten worden ist durch Multiplizieren eines Dosismodulationskoeffizienten auf Grundlage der reprasentativen Temperatur mit einer Musterflachendichte als ein Element, und eine Dosis wird verwendet, die einen Unterschied machen zwischen einem Wert, der erhalten worden ist durch Betreiben des Polynoms, und der Dosisschwelle innerhalb einer Toleranz.

Yasuo Kato

Papers

Charged particle beam writing apparatus and charged particle beam dose check method

Charged particle beam writing apparatus and method for acquiring dose modulation coefficient of charged particle beam

Charged particle beam writing device and method for acquiring dose modulation coefficient

Particle beam writing device and method for checking exposure of particle beam

Ladungsteilchenstrahl-Schreibvorrichtung und Verfahren zum Akquirieren eines Dosismodulationskoeffizienten eines Ladungsteilchenstrahls