An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

Substrate Processing Apparatus

An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film

Method for Manufacturing Semiconductor Device

In a state that a plate-shaped insulator is disposed adjacent to a plate-shaped electrode, a discharge gas containing an inert gas is supplied to a vicinity of a processing object from one gas exhaust port located nearer from the plate-shaped electrode, out of at least two-line gas exhaust ports which are disposed around the plate-shaped electrode and which are formed so as to be surrounded by the plate-shaped insulator and moreover which are different in distance to the plate-shaped electrode from each other, while a discharge control gas is supplied from the other gas exhaust port to the vicinity of the processing object. Simultaneously with the supply of the gases, electric power is supplied to the plate-shaped electrode or the processing object, by which plasma processing of the processing object is carried out. Thus, plasma processing method and apparatus capable of processing for desired fine linear portions with high precision are provided.

Plasma processing method and apparatus

A dielectric substance is laminated on one surface of a piezoelectric substance, and an IDT and reflectors are disposed as electrodes at a boundary between the piezoelectric substance and the dielectric substance, and the thickness of the electrodes is determined so that the acoustic velocity of the Stoneley wave is decreased less than that of a slow transverse wave propagating through the dielectric substance and that of a slow transverse wave propagating through the piezoelectric substance, thereby forming a boundary acoustic wave device.

Boundary acoustic wave device

PURPOSE: To easily control the shape of a groove having a width not greater than 1μm by making the energy of the etchant higher as the groove becomes deeper when forming the groove in a semiconductor by means of the plasma etching. CONSTITUTION: An SiO 2 mask is applied on a silicon substrate, and the RIE is performed to form a groove 3. As a typical gas, a mixed gas of SiCl 4 +Cl 2 +SF 6 is used. At this time, after etching is performed for a certain time under a fixed condition, etching is repeated with the energy of the etchant being made higher as the groove becoming deeper. Alternatively, the composition ratio, flow rate, pressure, power or the like of the gas may be varied, or the degree of vacuum may be enhanced, or the etchant energy may be increased by increasing the RF power. Also, other condition may be varied with the composition ratio and flow rate of the gas being kept constant. With this constitution, the proportion of a chemical etching is made larger when the depth of the groove is shallow thereby to suppressing the re-deposition of the etching product, and the proportion of a physical etching is increased as the groove becomes deeper, whereby side-wall deposit 4 and the ion energy itself can be optimized depending of the depth, and fine grooves of various shapes can easily be formed. COPYRIGHT: (C)1988,JPO&Japio

Dry etching method

PROBLEM TO BE SOLVED: To generate plasma under the pressure of high-vacuum degree in a plasma treating device, regardless of applied high-frequency electric power, having a high frequency, thereby to accurately perform plasma treating having high uniformity and low damage. SOLUTION: A lower electrode 12, for retaining an object 13 to be treated, is provided via an insulator 11 on the bottom part in a chamber 10a. In a first high-frequency power source 14, high-frequency electric power is applied to a multi-spiral-coil 15A, consisting of four parallely connected spiral coil parts 15a, via an impedance matching apparatus 16A. The length of respective coil portions 15a to one coil is 1/4 of the wavelength of the high-frequency electric power supplied from the first high frequency power source 14. The second high frequency power source 17 applies high-frequency bias voltage to the lower electrode 12. COPYRIGHT: (C)1997,JPO

Devices for high-frequency electric power applying, plasma generating, and plasma treating; and methods for high-frequency electric power applying, plasma generating, and plasma treating

PROBLEM TO BE SOLVED: To provide a method and apparatus for plasma treatment in which a temperature change of a dielectric window can be controlled and a substantial power which can be utilized for plasm treatment is large and a high frequency noise is hard to occur SOLUTION: The plasma treatment includes a process in which a predetermined reaction gas is introduced into a vacuum container 1 from a gas supplying unit 2 and exhausting is conducted in a vacuum exhausting unit 3, and while an inside of the vacuum container 1 is kept at a predetermined pressure, high frequency power is impressed by a high frequency power source 4 on a high frequency electrode 6 located outside of a dielectric window 5 and plasma is generated in the vacuum container 1, and plasma treatment can be conducted on a substrate 8 mounted on a substrate electrode 7 At this time, fluid is put to flow in a passage 11 provided inside the dielectric window 5 to control a temperature of the dielectric window 5 COPYRIGHT: (C)2008,JPO&INPIT

Method and apparatus for plasma treatment

PURPOSE: To provide a functional film which retains transparency, has ultrahigh water and oil repellency, and has practically sufficient reliability and strength of the water-repellent surface. CONSTITUTION: An inorganic hard film (a silicon oxide film 12) is formed on a plastic film (a poly(ethylene terephthalate) film 11). The resulting film is etched with plasma discharge in a gas containing carbon and fluorine to form adequate fine roughness 13, and the roughened surface is hydrophilized. A fluorinated chemisorbed monomolecular film 14 is then formed through siloxane bonds. Thus, a functional film is obtained which is good in transparency and combines excellent water and oil repellency and surface strength withstanding practical use. COPYRIGHT: (C)1994,JPO&Japio

Water-and oil-repellent film and production thereof

PROBLEM TO BE SOLVED: To provide a surface acoustic wave element having high signal transmission efficiency, and an easy fabrication method thereof, in which fine patterning and high density with high power required for high frequency surface acoustic wave element can be realized without causing any migration or delamination of conductor film. SOLUTION: The surface acoustic wave element comprises a piezoelectric substrate 11, a circuit pattern groove made in the surface thereof, and conductors 12 buried in the groove. The fabrication process comprises a step for forming a circuit pattern mask on the substrate 11, a step for etching a circuit pattern groove, and a step for burying conductors in the groove.

一郎中山

Papers

Dry etching method

Devices for high-frequency electric power applying, plasma generating, and plasma treating; and methods for high-frequency electric power applying, plasma generating, and plasma treating

Method and apparatus for plasma treatment

Water-and oil-repellent film and production thereof

Surface acoustic wave element and fabrication thereof

一郎 中山

Papers

Dry etching method

Devices for high-frequency electric power applying, plasma generating, and plasma treating; and methods for high-frequency electric power applying, plasma generating, and plasma treating

Method and apparatus for plasma treatment

Water-and oil-repellent film and production thereof

Surface acoustic wave element and fabrication thereof

一郎中山