A solid state imaging device includes a substrate of a first conductivity type. A transistor, which includes a first gate electrode and a first and second impurity areas, is provided on a surface of the substrate. The first and second impurity areas are formed in the surface of the substrate and sandwich a region under the first gate electrode. A third impurity area of a second conductivity type is formed in the surface of the substrate and spaced from the second impurity area at an opposite side to the first gate electrode. A fourth impurity area is formed under the second impurity area and connected to the third impurity area. A second gate electrode is provided above the substrate. A fifth impurity area of the second conductivity type is formed in the surface of the substrate. The third and fifth impurity areas sandwich a region under the second gate electrode.

Solid state imaging device

PROBLEM TO BE SOLVED: To provide a semiconductor-on-insulator device comprising a transistor oriented in the orientation. SOLUTION: The semiconductor-on-insulator device includes silicon active layers 30a to 30d with a crystal orientation located on an insulating layer 40. The insulating layer 40 is located on a substrate 10 with crystal orientation. On the silicon active layers 30a to 30c, transistors 16 and 18 set in the direction are formed. COPYRIGHT: (C)2006,JPO&NCIPI

Yo Furyo

Papers

Semiconductor device, semiconductor chip, and method for manufacturing the semiconductor device