An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

A microelectronic package includes a microelectronic element having faces and contacts, the microelectronic element having an outer perimeter, and a substrate overlying and spaced from a first face of the microelectronic element, whereby an outer region of the substrate extends beyond the outer perimeter of the microelectronic element. The microelectronic package includes a plurality of etched conductive posts exposed at a surface of the substrate and being electrically interconnected with the microelectronic element, whereby at least one of the etched conductive posts is disposed in the outer region of the substrate. The package includes an encapsulating mold material in contact with the microelectronic element and overlying the outer region of the substrate, the encapsulating mold material extending outside of the etched conductive posts for defining an outermost edge of the microelectronic package.

Microelectronic packages and methods therefor

Large capacity memory systems are constructed using stacked memory integrated circuits or chips. The stacked memory chips are constructed in such a way that eliminates problems such as signal integrity while still meeting current and future memory standards.

Methods and apparatus of stacking DRAMs

In a memory module including a plurality of DRAM chips which transmit/receive a system data signal with a predetermined data width and at a transfer rate and which transmit/receive an internal data signal having a larger data width and a lower transfer rate as compared with the system data signal, the transfer rate of the system data signal is restricted. Current consumption in DRAMs constituting the memory module is large, hindering speed increases. For this memory module, a plurality of DRAM chips are stacked on an IO chip. Each DRAM chip is connected to the IO chip by a through electrode, and includes a constitution for mutually converting the system data signal and the internal data signal in each DRAM chip by the IO chip. Therefore, wiring between the DRAM chips can be shortened, and DLL having a large current consumption may be disposed only on the IO chip.

Memory module and memory system

Integrated circuit chips and chip packages are disclosed that include an over-passivation scheme at a top of the integrated circuit chip and a bottom scheme at a bottom of the integrated circuit chip using a top post-passivation technology and a bottom structure technology. The integrated circuit chips can be connected to an external circuit or structure, such as ball-grid-array (BGA) substrate, printed circuit board, semiconductor chip, metal substrate, glass substrate or ceramic substrate, through the over-passivation scheme or the bottom scheme. Related fabrication techniques are described.

Integrated circuit chip using top post-passivation technology and bottom structure technology

Each of stacked memory chips has an ID generator circuit for generating identification information in accordance with its manufacturing process. Since the memory chip manufacturing process implies process variations, the IDs generated by the respective ID generator circuits are different from one another even though the ID generator circuits are identical in design. A memory controller instructs an ID detector circuit to detect the IDs of the respective memory chips, and individually controls the respective memory chips based on the detected IDs.

Stacked semiconductor device and semiconductor chip control method

A module substrate has a plurality of module data terminal pairs individually provided in association with respective chip data terminals in a plurality of memory chips, and a plurality of module data wirings which respectively connect between the plurality of module data terminal pairs. The plurality of module data wirings are connected to their corresponding chip data terminals and are configured so as to be available as a memory access data bus. In a memory system in which a plurality of memory modules are arranged in parallel, module data wirings of each individual memory modules are connected in serial form, and each individual module data wirings do not constitute branch wirings with respect to a data bus on a motherboard of the memory system. In the memory modules, parallel access for the number of bits corresponding to the width of the memory access data bus is assured.

Memory module including module data wirings available as a memory access data bus

A high-speed operation, low-power consumption gate circuit structure comprises a combination of complementary field-effect-transistors and bipolar transistors and discharge means for discharging accumulated charges from these transistors when the field-effect-transistors and bipolar transistors are turned off.

Gate circuit of combined field-effect and bipolar transistors

Control on the speed of operation of a delay loop from the output of a variable delay circuit to a delay control input thereof is performed. For example, frequency-dividing circuits are respectively placed at the input and output of the variable delay circuit. A signal obtained by frequency-dividing a signal outputted from the variable delay circuit is supplied to one input of a phase comparator through a dummy delay circuit, and a signal obtained by frequency-dividing the input of the variable delay circuit is supplied to the other input of the phase comparator. Phase control is performed according to the result of comparison between the phases of both signals.

Semiconductor device and timing control circuit

PROBLEM TO BE SOLVED: To easily realize necessary function and performance such as a protocol for high-speed memory access without incorporating any complex input/output circuit or control circuit for high-speed operation in a mounted memory. SOLUTION: A memory module (MODc) is provided with input/output terminals (IPO0-IPO15), to which a control signal based on a protocol control configuration is supplied, a protocol converter (23) connected to the input/output terminals for mutually converting different access control configurations, and SDRAM devices (M0-M15) connected to the input/output terminals via the protocol converter for working based on the access control configuration different from the protocol control configuration. The protocol converter has register buffers (RBUFc0-RBUFc15) each having a parallel-serial conversion function, converts serial data fed from the input/output terminals to the SDRAM devices into parallel data, and converts parallel data fed from the SDRAM devices to the input/output terminals into serial data. COPYRIGHT: (C)2006,JPO&NCIPI

Yoji Nishio

Papers

Stacked semiconductor device and semiconductor chip control method

Memory module including module data wirings available as a memory access data bus

Gate circuit of combined field-effect and bipolar transistors

Semiconductor device and timing control circuit

Memory module and data processing system