Semiconductor light emitting devices and methods of producing same are provided The semiconductor light emitting devices include a substrate that has a surface including a difference-in-height portion composed of, for example, a wurtzite compound A crystal growth layer is formed in the substrate surface wherein at least a portion of which is oriented along an inclined plane with respect to a principal plane of the substrate The semiconductor device includes a first conductive layer, an active layer and a second conductive layer formed on the crystal layer in a stacked arrangement and oriented along the inclined place

Semiconductor light emitting device and fabrication method thereof

A nitride semiconductor element excellent in characteristics even its element structure is three-dimensionally formed by a selective growth or the like, and a production method therefor. A nitride semiconductor element having an electrode layer (21) formed via a high-resistance region such as an undoped gallium nitride layer (17) on the upper layer of a crystal layer having a side surface (16s) and the upper layer (16t) and being grown three-dimensionally. A high resistance region provided to the upper layer (16t) allows current to flow so as to bypass the high resistance region of the upper layer (16t) to form a current route mainly consisting of the side surface (16s) with the upper layer (16t) bypassed. As a result, current is prevented from flowing to the upper layer (16t) having a poor crystallinity.

Nitride semiconductor element and production method for nitride semiconductor element

A first Group III nitride compound semiconductor layer 31 is etched, to thereby form an island-like structure such as a dot-like, stripe-shaped, or grid-like structure, so as to provide a trench/post. Thus, a second Group III nitride compound layer 32 can be epitaxially grown, vertically and laterally, from a top surface of the post and a sidewall/sidewalls of the trench serving as a nucleus for epitaxial growth, to thereby bury the trench and also grow the layer in the vertical direction. In this case, propagation of threading dislocations contained in the first Group III nitride compound semiconductor layer 31 can be prevented in the upper portion of the second Group III nitride compound semiconductor 32 that is formed through lateral epitaxial growth. As a result, a region having less threading dislocations is formed at the buried trench.

Method for producing group iii nitride compound semiconductor and group iii nitride compound semiconductor device

An Al0.15Ga0.85N layer 2 is formed on a silicon substrate 1 in a striped or grid pattern. A GaN layer 3 is formed in regions A where the substrate 1 is exposed and in regions B which are defined above the layer 2. At this time, the GaN layer grows epitaxially and three-dimensionally (not only in a vertical direction but also in a lateral direction) on the Al0.15Ga0.85N layer 2. Since the GaN layer grows epitaxially in the lateral direction as well, a GaN compound semiconductor having a greatly reduced number of dislocations is obtained in lateral growth regions (regions A where the substrate 1 is exposed).

Method for manufacturing gallium nitride compound semiconductor

An optical electronic integrated circuit comprises: a silicon substrate; an electronic circuit formed in the silicon substrate and processing an electric signal; a ZnO film formed on at least portion of the silicon substrate; and an optical circuit electrically connected to the electronic circuit. The optical circuit includes at least one GaN-based semiconductor compound layer which is provided on the ZnO film, and the GaN-based compound semiconductor layer either receives or emits an optical signal.

Opto-electronic integrated circuit

PURPOSE:To make it possible to have a stable transverse mode and high output operation by making the third clad layer, an optical guide layer, a contact layer, the second clad layer which is a region directly under the optical guide layer and an active layer to be of the first conductivity type and the other regions be of the second conductivity type while making the width of a forbidden band near the resonator end face of the active layer be larger than in its inside. CONSTITUTION:In the region distant from the ridge part of an optical guide layer 8, a conductivity type of each layer in the vertical direction to a substrate 1 is in the order of npnp from the side of the substrate 1. Accordingly, when voltage is impressed so that a p-electrode 10 may be positive (+) and an n-electrode 11 may be negative (-), pn junction between a clad layer 5 and a current block layer 6 becomes a reverse bias so that not a current flows in this region. On the contrary, since a contact layer 7 and the optical guide layer 8 are linked together through a p-type diffusion region 9 in the vicinity of the optical guide layer 8, holes are injected from a clad layer 4a to an active layer 3a and electrons are implanted from a clad layer 2 to the active layer 3a in the lower part of the optical guide layer 8 for causing luminescence due to recombination of electrons and holes.

Semiconductor laser device and its manufacture

PROBLEM TO BE SOLVED: To enhance the quality of a GaN based compound semiconductor layer while preventing an Si substrate from bending by forming a stress absorption layer of GaAs, a buffer layer of AlGaInN compound having specified composition, and an AlGaInN compound semiconductor layer having specified composition sequentially on an Si substrate. SOLUTION: A stress absorbing layer 2 of GaAs is formed on an Si substrate 1 and a compound buffer layer 3 having composition of Alx Ga1-x-y Iny N (0<=x<=1, 0<=y<=1) is formed thereon followed by formation of a compound buffer layer 4 having composition of Alx Ga1-x-y Iny N (0<=x<=1, 0<=y<=1) further thereon. The buffer layer 3 protects the stress absorbing layer 2 against high temperature at the time of forming a compound semiconductor layer 4 thus preventing the stress absorbing layer 2 from being decomposed. Consequently, stress due to lattice mismatching between the Si substrate 1 and compound semiconductor layer 4 is absorbed by the stress absorbing layer 2.

Semiconductor device and fabrication thereof

PURPOSE:To improve integration without cross talk, by forming a light receiving region made up of a CdHgTe layer and an upper different conductive type of CdHgTe layer with a side insulating film in each recessed part on a substrate. CONSTITUTION:Since a p-type C(0.2)M(0.8)T layer 21 is surrounded by a separation layer 8 with a larger ratio of Cd elements, an electric potential is generated therein, and an electron 71 is not transferred over this region to another picture element. Likewise, when an electron 72 is generated through an infrared ray incident into a picture element 102, the electron 72 can be detected surely as an output from the picture element 102. Then, cross talk is prevented and good resolution in picture element can be obtained in an infrared detector 501 without reducing the sensitiveness. In addition, the separation layer 8 is formed finely and precisely in an electron-beam exposure system and the high-density in packaging can be realized.

Infrared detector and manufacturing thereof

PROBLEM TO BE SOLVED: To provide a semiconductor laser device of simple constitution which has a small threshold current and small deterioration in temperature characteristics of current-light output characteristics SOLUTION: The device has an n-GaAs substrate 1 of 01×1018 cm-3 to 15×1018 cm-3 in the impurity concentration of a dopant, an n-type lower clad layer 3 arranged on the substrate 1, a first p-type upper clad layer 5, an n-type current block layer 7 having a first layer 7a which is arranged on the first upper clad layer 5 and close to the first upper clad layer 5 and a second layer 7b which is arranged on the first layer 7a and has higher impurity concentration than the first layer 7a, and a p-type second upper clad layer 8 The diffusion of a p-type dopant from the first upper clad layer 5 to an active layer 4 is suppressed COPYRIGHT: (C)2002,JPO

Semiconductor laser device and its manufacturing method

PURPOSE: To provide a high performance laser diode that emits the light of short wavelength of ultraviolet to green and to provide a method of manufacturing it. CONSTITUTION: An n type GaN contact layer 5 is formed on a sapphire substrate 1, and an n type AlGaN clad layer 7, a GaN active layer 8 without doping, a p type AlGaN clad layer 9, a p type GaN contact layer 10 and a p type semiconductor reflecting mirror 11 are laminated on the n type GaN contact layer 5 to form an epitaxial layer. The back surface of the sapphire substrate 1 and the surface of the n type contact layer 5 are constituted on the same continuous plane and an electrode 17 that is connected to the n type contact layer 5 is formed on the same plane. COPYRIGHT: (C)1996,JPO

Yoshihei Kawatsu

Papers

Semiconductor laser device and its manufacture

Semiconductor device and fabrication thereof

Infrared detector and manufacturing thereof

Semiconductor laser device and its manufacturing method

Semiconductor laser diode and method of manufacture