The purpose of the present invention is to provide a fluorescent-light-source device in which, when a wavelength conversion member is exposed to excitation light, backscattering of said excitation light is minimized and fluorescent light generated inside the wavelength conversion member is utilized effectively and emitted to the outside with high efficiency, yielding a high light-emission efficiency. This fluorescent-light-source device is characterized by the provision of a wavelength conversion member in the form of a florescent material that is excited by excitation light. This fluorescent-light-source device is further characterized in that: a periodic structure comprising substantially cone-shaped protrusions arrayed in a periodic fashion is formed on an excitation-light-receiving surface on the wavelength conversion member; the aspect ratio of said periodic structure, namely the quotient of the heights of the protrusions and the period of the periodic structure, is at least 0.2; and said period falls within a range within which fluorescent light emitted by the florescent material is diffracted.

Fluorescent light source device

A laser diode firing circuit for a light detection and ranging device is disclosed. The firing circuit includes a laser diode coupled in series to a transistor, such that current through the laser diode is controlled by the transistor. The laser diode is configured to emit a pulse of light in response to current flowing through the laser diode. The firing circuit includes a capacitor that is configured to charge via a charging path that includes an inductor and to discharge via a discharge path that includes the laser diode. The transistor controlling current through the laser diode can be a Gallium nitride field effect transistor.

Laser diode firing system

A lighting device includes a constant-current circuit, a smoothing capacitor, a bypass circuit, a detection unit, and a bypass control unit. The constant-current circuit supplies a constant current to a plurality of solid-state light-emitting elements connected in series. The smoothing capacitor is connected between output terminals of the constant-current circuit. The bypass circuit is connected in parallel to one or more of the plurality of solid-state light-emitting elements. The detection unit detects whether the one or more solid-state light-emitting elements are open-circuited. When the detection unit detects that at least one of the one or more solid-state light-emitting elements is open-circuited, the bypass control unit discharges the smoothing capacitor during a discharge period to then bypass the one or more solid-state light-emitting elements through the bypass circuit.

Lighting device and luminaire

A touch screen panel is directly formed on an upper substrate of a flat panel display which provides a flat panel display integrated with the touch screen panel with an improved yield and reliability by improving ESD defect prevention due to the introduction of electrostatic by using a shield member covering sensing lines so that the sensing lines formed in a non-display region of the touch screen panel are not exposed to the outside.

Flat panel display integrated with touch screen panel

PROBLEM TO BE SOLVED: To provide a semiconductor device having a fine structure; and manufacture the semiconductor device having the fine structure with good yield.SOLUTION: A semiconductor device manufacturing method comprises: forming a semiconductor layer, a gate insulation layer on the semiconductor layer, a gate electrode layer on the gate insulation layer and a side wall insulation layer which covers lateral faces of the gate electrode layer; forming a conductive film which is to be a source electrode layer and a drain electrode layer so as to cover the semiconductor layer, the gate insulation layer, the gate electrode layer and the side wall insulation layer; forming a first protection film on the conductive film; performing first etching on a resist film provided on the first protection film to form a resist mask from which a region overlapping the gate electrode layer is removed; performing second etching on the first protection film by using the resist mask to form a second protection film; and performing third etching on the conductive film by using the second protection film as a mask to remove a region of the conductive film, which overlaps the gate electrode layer and to form the source electrode layer and the drain electrode layer.

Semiconductor device and semiconductor device manufacturing method

A light emitting device which includes at least one of a laser light source ( 1 ), wiring ( 9 ), a lens for excitation ( 2 ), a luminous body ( 4 ), a laser cut filter ( 6 ), a half parabolic mirror ( 5 P), and a base ( 5 h ), in which a part of the wiring ( 9 ) is installed at a portion in which a breakage easily occurs due to at least one deformation of the laser light source ( 1 ), the lens for excitation ( 2 ), the luminous body ( 4 ), the laser cut filter ( 6 ), the half parabolic mirror ( 5 P), and the base ( 5 h ), or a change in an installation position thereof.

Light emitting device, lighting system, headlight, and vehicle

A vehicle driving device is arranged such that in accordance with an instruction signal from the outside, a first battery managing section outputs, to the outside, a signal related to charging/discharging control for a first battery.

Vehicle driving device, vehicle charging system, and automobile

A light-emitting device is provided with a laser light source (1), wiring (9), and at least one among an excitation lens (2), a light-emitting body (4), a laser cut-off filter (6), a half parabolic mirror (5P), and a base (5h). A part of the wiring (9) is disposed at a point where a wire break can easily occur as a result of a change in the installation position or the shape of at least one among the laser light source (1), the excitation lens (2), the light-emitting body (4), the laser cut-off filter (6), the half parabolic mirror (5P), and the base (5h).

Light-emitting device, illumination device, headlamp, and vehicle

A memory element having a large memory window and a high reliability is provided at low cost by performing high speed write and erase operations at a relatively low voltage and suppressing rewrite degradation. A memory element includes a semiconductor layer arranged on an insulating substrate, a first diffusion layer region and a second diffusion layer region having a conductivity type of P-type, a charge accumulating film for covering a channel region between the first diffusion layer region and the second diffusion layer region and being injected with charges from the channel region, and a gate electrode positioned on a side opposite to the channel region with the charge accumulating film in between.

Semiconductor element and device using the same

In the present invention, the number of semiconductor laser elements contained in a semiconductor laser element group (105) is a number such that a chopper circuit (108) maintains a required driving voltage of the semiconductor laser element group (105) at a rising voltage or dropping voltage relationship with respect to a predetermined voltage fluctuation of a DC power source (107).

Yoshiji Ohta

Papers

Light emitting device, lighting system, headlight, and vehicle

Vehicle driving device, vehicle charging system, and automobile

Light-emitting device, illumination device, headlamp, and vehicle

Semiconductor element and device using the same

Laser light emitting device, and vehicle lighting appliance using same