A microprocessor packaging architecture using a modular circuit board assembly that provides power to a microprocessor while also providing for integrated thermal and electromagnetic interference (EMI) is disclosed. The modular circuit board assembly comprises a substrate, having a component mounted thereon, a circuit board, including a circuit for supplying power to the component, and at least one conductive interconnect device disposed between the substrate and the circuit board, the conductive interconnect device configured to electrically couple the circuit to the component.

Method and apparatus for providing power to a microprocessor with integrated thermal and EMI management

An electrical connection box includes a plurality of circuit components at least partially overlapped one above the other and substantially parallel with each other each circuit component having a substrate including a switching member and an electric power conducting path; and a supporting member that retains the circuit components. The switching member capable of attaching and detaching is arrayed on an upper plane of an upper substrate. The electric power conducting path of a lower circuit component is provided with a terminal connectable by extending above the upper substrate with the switching member.

Electrical connection box

A stacked multiple connection module that provides multiple times the input/output (I/O) signal capacity of a single connection module In one embodiment, a stacked dual connection module includes first and second circuit boards with respective edge connectors maintained at a parallel offset and configured to couple to a mating two slotted stacked edge connector A connection means is provided to couple signals between the first and second circuit boards, such that components mounted on the first and/or second circuit board are enabled to access I/O signals via both of the edge connectors, thus doubling I/O signal capacity In one embodiment, the stacked dual connection module comprises an Advanced Mezzanine Card (AdvancedMC) module having edge connectors configured to mate with an AdvancedMC connector

Stacked multiple connection module

In one embodiment of the invention, a semiconductor device set comprises at least one trench-typed MOSFET and a trench-typed termination structure. The trench-typed MOSFET has a trench profile and comprises a gate oxide layer in the trench profile, and a polysilicon layer on the gate oxide layer. The trench-typed termination structure has a trench profile and comprises an oxide layer in the trench profile. A termination polysilicon layer with discrete features separates the termination polysilicon layer. An isolation layer covers the termination polysilicon layer and filling the discrete features. The trench-typed MOSFET and the trench-typed termination structure may be formed on a DMOS device comprising an N+ silicon substrate, an N epitaxial layer on the N+ silicon substrate, and a P epitaxial layer on the N epitaxial layer. The trench profiles of the trench-typed MOSFET and of the trench-typed termination structure may penetrate through the P epitaxial layer into the N epitaxial layer.

Termination structure of DMOS device

A power interconnection system comprising a plurality of z-axis compliant connectors passing power and ground signals between a first circuit board to a second circuit board is disclosed. The interconnection system provides for an extremely low impedance through a broad range of frequencies and allows for large amounts of current to pass from one substrate to the next either statically or dynamically. The interconnection system may be located close to the die or may be further away depending upon the system requirements. The interconnection may also be used to take up mechanical tolerances between the two substrates while providing a low impedance interconnect.

System and method for processor power delivery and thermal management

In an electronic control unit, a drive element liable to generate heat and a control processing element liable to be affected by heat are respectively mounted on a drive circuit board and a control circuit board different from each other, and the two boards are connected to each other by a flexible printed circuit board. The bonding portion of the flexible printed circuit board to the control circuit board is a back side portion of a connector mounted on the control circuit board at the same side as the control processing element. Therefore, heat generated by the drive element is suppressed from being transferred to the control processing element without causing layout hindrances.

Electronic control unit having drive element and control processing element

A driver circuit card (11) and control circuit card (9) are mounted in housing (7) with heat emission face (7b). A connector (2) for external connection is mounted to the control circuit card on the side, which is opposite to the side facing the driver circuit card. Cards are mutually connected by a connection wire (13), such that connection section of wire in control circuit card is area below connector. The electronic control unit has a drive circuit card with the driver element for power supply and control circuit card with a control process element (3) arranged in a single housing, such that the driver card is arranged over the heat emission face. A connector for external connection is mounted over the control card and exposed to exterior for controlling external devices. The boards are electrically connected by a connection wire or a flexible circuit board. The flexible circuit board extends from the edge of the driver circuit card and attached to the control circuit board in the connection section which is below the area secured by connector mounted in the other side of the control circuit board.

Electronic control unit e.g. for actuator, spark plug in vehicle, has separate driver circuit card and control circuit card within housing, with connector for external, connected by flexible printed circuit card

A drift layer is formed on a substrate. A base region is formed on the drift layer. A plurality of source regions are formed in a surficial layer of the base region. A plurality of gate electrodes face to the base region and the source region via a gate insulating film. A source electrode is brought into contact with the base region and the source region. A nitrogen cluster containing layer is embedded in the drift layer so as to extend laterally under the base region so that at least part of the drift region is left under the nitrogen cluster containing layer.

Metal oxide semiconductor transistor and manufacturing method for the same

Metal oxide semiconductor transistor having a nitrogen cluster containing layer embedded in the substrate

Metalloxidhalbleitertransistor mit: einer Driftschicht (2, 4) eines ersten Leitfahigkeitstyps, die auf einem Halbleitersubstrat (1) ausgebildet ist, einem Basisbereich (5, 5a) eines zweiten Leitfahigkeitstyps, der auf der Driftschicht ausgebildet ist, mindestens einem Source-Bereich (6), des ersten Leitfahigkeitstyps, der in einer Oberflachenschicht des Basisbereichs ausgebildet ist, mindestens einer Gate-Elektrode (9), die dem Basisbereich und dem Source-Bereich uber einen Gate-Isolationsfilm (8) gegenuberliegt, und einer Source-Elektrode (11), die sich mit dem Basisbereich und dem Source-Bereich in Kontakt befindet, wobei eine Schicht (3), die Stickstoffcluster enthalt, in die Driftschicht eingebettet ist, mindestens ein Teil der Driftschicht sich unter der Schicht (3) befindet, die Stickstoffcluster enthalt, und die Schicht (3), die Stickstoffcluster enthalt, sich selektiv entlang einer Ebene parallel zu der Oberflache des Halbleitersubstrats (1) erstreckt, vollstandig unterhalb des Basisbereichs und nicht uber einen Vorsprung hinausgehend verlauft, wobei die Driftschicht eine erste Epitaxieschicht (2) des ersten Leitfahigkeitstyps und eine...

Yoshitaka Nakano

Papers

Electronic control unit having drive element and control processing element

Electronic control unit e.g. for actuator, spark plug in vehicle, has separate driver circuit card and control circuit card within housing, with connector for external, connected by flexible printed circuit card

Metal oxide semiconductor transistor and manufacturing method for the same

Metal oxide semiconductor transistor having a nitrogen cluster containing layer embedded in the substrate

Metalloxidhalbleitertransistor und Herstellungsverfahren für Selbigen