Three dimensional topological insulators, as a new phase of quantum matters, are characterized by an insulating gap in the bulk and a metallic state on the surface. Particularly, most of the topological insulators have narrow band gaps, and hence have promising applications in the area of terahertz optoelectronics. In this work, we experimentally demonstrate an electronically-tunable terahertz intensity modulator based on Bi1:5Sb0:5Te1:8Se1:2 single crystal, one of the most insulating topological insulators. A relative frequency-independent modulation depth of ~62% over a wide frequency range from 0.3 to 1.4 THz has been achieved at room temperature, by applying a bias current of 100 mA. The modulation in the low current regime can be further enhanced at low temperature. We propose that the extraordinarily large modulation is a consequence of thermally-activated carrier absorption in the semiconducting bulk states. Our work provides a new application of topological insulators for terahertz technology.

Topological-insulator-based terahertz modulator

Orbital occupancy control in correlated oxides allows the realization of new electronic phases and collective state switching under external stimuli. The resultant structural and electronic phase transitions provide an elegant way to encode, store, and process information. In this review, we examine the utilization of Mott metal-to-insulator transitions, for memory and neuromorphic devices. We emphasize the overarching electron–phonon coupling and electron–electron interaction-driven transition mechanisms and kinetics, which renders a general description of Mott memories from aspects such as nonvolatility, sensing scheme, read/write speed, and switching energy. Various memory and neuromorphic device architectures incorporating phase transition elements are reviewed, focusing on their operational principles. The role of Peierls distortions and crystal symmetry changes during phase change is discussed. Prospects for such orbitronic devices as hardware components for information technologies are summarized.

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Mott Memory and Neuromorphic Devices

Hybrid metamaterials that exhibit reconfigurable responses under external stimulus, such as electric fields and light radiation, have only recently been demonstrated by combining active media with patterned metallic structures. Nevertheless, hybrid terahertz (THz) metamaterials whose spectral performance can be dynamically tuned over a large scale remain rare. Compared with most active media (for instance, silicon) that provide limited activity, vanadium dioxide (VO2), which exhibits an insulator-to-metal transition, has been recently explored to facilitate dynamically tunable metamaterials. More importantly, the phase transition yields a three orders of magnitude increase in THz electrical conductivity, which suggests the potential for creating VO2 based hybrid resonators that operate at THz frequencies. Here, we show that an integration of VO2 structures and conventional metallic resonating components can enable a class of highly tunable THz metamaterials. Considering the widely studied phase-transition dynamics in VO2, the proposed hybrid metamaterials are capable of offering ultrafast modulation of THz radiation.

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Hybrid Resonators and Highly Tunable Terahertz Metamaterials Enabled by Vanadium Dioxide (VO 2 )

The past few decades have witnessed a substantial increase in terahertz (THz) research. Utilizing THz waves to transmit communication and imaging data has created a high demand for phase and amplitude modulation. However, current active THz devices, including modulators and switches, still cannot meet THz system demands. Double-channel heterostructures, an alternative semiconductor system, can support nanoscale two-dimensional electron gases (2DEGs) with high carrier concentration and mobility and provide a new way to develop active THz devices. In this Letter, we present a composite metamaterial structure that combines an equivalent collective dipolar array with a double-channel heterostructure to obtain an effective, ultrafast, and all-electronic grid-controlled THz modulator. Electrical control allows for resonant mode conversion between two different dipolar resonances in the active device, which significantly improves the modulation speed and depth. This THz modulator is the first to achieve a 1 GHz ...

Gbps terahertz external modulator based on a composite metamaterial with a double-channel heterostructure.

Thermally Dependent Dynamic Meta-Holography Using a Vanadium Dioxide Integrated Metasurface

We demonstrate an active metamaterial device that allows to electrically control terahertz transmission over more than one order of magnitude. Our device consists of a lithographically defined gold nano antenna array fabricated on a thin film of vanadium dioxide (VO2), a material that possesses an insulator to metal transition. The nano antennas let terahertz (THz) radiation funnel through when the VO2 film is in the insulating state. By applying a dc-bias voltage through our device, the VO2 becomes metallic. This electrically shorts the antennas and therefore switches off the transmission in two distinct regimes: reversible and irreversible switching.

Young Gyun Jeong

Papers

Electrical control of terahertz nano antennas on VO2 thin film.