Probability Distributions.- Linear Models for Regression.- Linear Models for Classification.- Neural Networks.- Kernel Methods.- Sparse Kernel Machines.- Graphical Models.- Mixture Models and EM.- Approximate Inference.- Sampling Methods.- Continuous Latent Variables.- Sequential Data.- Combining Models.

Pattern Recognition and Machine Learning

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

An object of the present invention is to decrease the resistance of a power supply line, to suppress a voltage drop in the power supply line, and to prevent defective display. A connection terminal portion includes a plurality of connection terminals. The plurality of connection terminals is provided with a plurality of connection pads which is part of the connection terminal. The plurality of connection pads includes a first connection pad and a second connection pad having a line width different from that of the first connection pad. Pitches between the plurality of connection pads are equal to each other.

Semiconductor device and display device

A TFT includes a zinc oxide (ZnO)-based channel layer having a plurality of semiconductor layers. An uppermost of the plurality of semiconductor layers has a Zn concentration less than that of a lower semiconductor layer to suppress an oxygen vacancy due to plasma. The uppermost semiconductor layer of the channel layer also has a tin (Sn) oxide, a chloride, a fluoride, or the like, which has a relatively stable bonding energy against plasma. The uppermost semiconductor layer is relatively strong against plasma shock and less decomposed when being exposed to plasma, thereby suppressing an increase in carrier concentration.

Thin film transistors and methods of manufacturing the same

A non-volatile semiconductor storage device has a plurality of memory strings to each of which a plurality of electrically rewritable memory cells are connected in series. Each of the memory strings includes first semiconductor layers each having a pair of columnar portions extending in a vertical direction with respect to a substrate and a coupling portion formed to couple the lower ends of the pair of columnar portions; a charge storage layer formed to surround the side surfaces of the columnar portions; and first conductive layers formed to surround the side surfaces of the columnar portions and the charge storage layer. The first conductive layers function as gate electrodes of the memory cells.

Non-volatile semiconductor storage device and method of manufacturing the same

PROBLEM TO BE SOLVED: To provide a thin film transistor and a manufacturing method of the same. SOLUTION: The transistor includes a gate electrode and a channel layer formed, with a gate insulating layer sandwiched between them, and a source electrode and a drain electrode brought into contact with both ends of the channel layer, respectively, wherein the channel layer has a double layer structure, with carrier concentration of the upper layer made lower than the carrier concentration of the lower layer, and the channel layer can be set as a material layer of ZnO system such as Ga-In-Zn-O material layer. COPYRIGHT: (C)2008,JPO&INPIT

Thin film transistor and manufacturing method of the same

Since cable members are the major structural components of cable bridges, they should be properly inspected for surface damage and inside defects such as corrosion and/or breakage of wires. This study introduces an efficient image-based damage detection system that can automatically identify damages to the cable surface through image processing techniques and pattern recognition. The damage detection algorithm combines image enhancement techniques with principal component analysis (PCA) algorithm. Images from three cameras attached to a cable climbing robot are wirelessly transmitted to a server computer located on a stationary cable support. To improve the overall quality of the images, this study utilizes an image enhancement method together with a noise removal technique. Next the input images are projected into PCA sub-space, the Mahalanobis square distance is used to determine the distances between the input images and sample patterns. The smallest distance is found to be a match for an input image. The proposed damage detection algorithm was verified through laboratory tests on three types of cables. Results of the tests showed that the proposed system could be used to detect damage to bridge cables.

An efficient image-based damage detection for cable surface in cable-stayed bridges

CMOS image sensors having transparent transistors and methods of manufacturing the same are provided. The CMOS image sensors include a photodiode and at least one transistor formed on the photodiode. The image sensor may include a plurality of transistors wherein at least one of the plurality of transistors is a transparent transistor.

CMOS image sensors having transparent transistors and methods of manufacturing the same

An inverter, a logic circuit including the inverter and method of fabricating the same are provided. The inverter includes a load transistor of a depletion mode, and a driving transistor of an enhancement mode, which is connected to the load transistor. The load transistor may have a first oxide layer as a first channel layer. The driving transistor may have a second oxide layer as a second channel layer.

Young-Soo Park

Papers

Thin film transistor and manufacturing method of the same

An efficient image-based damage detection for cable surface in cable-stayed bridges

CMOS image sensors having transparent transistors and methods of manufacturing the same

Inverter, logic circuit including an inverter and methods of fabricating the same

Finite element model updating considering boundary conditions using neural networks