Influence of zinc on electrical and microstructural properties of CaCu3Ti4O12 ceramics prepared by sol–gel process

We proposed a good calcinations condition of the ZnO disk to control the crystallography and nanoparticles in ZnO disk. The crystallography of precursor powder and disk powder were analyzed by the X-ray diffraction (XRD). The mean nanoparticles of ZnO disk was determinate by XRD results and observed by scanning electron microscope. The temperature ranges of 400℃ to 650℃ in air for 30 minutes were used calcinations ZnO disk. These temperature can be controlled the single phase, lattice parameters, unit cell volume, crystalline size, d-value, texture coefficient and bond lengths of Zn–Zn, Zn–O and O–O which correspond significantly the hexagonal crystal structure. The nanoparticles were small changed mean of 76.59 nm at the calcinations temperature range.

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Effect of calcinations temperature on crystallography and nanoparticles in zno disk

Microstructure and electrical properties of Y(NO3)3·6H2O-doped ZnO-Bi2O3-based varistor ceramics

Microstructure and electrical properties of rare earth doped ZnO-based varistor ceramics

High dielectric permittivity and low dielectric loss in sol–gel derived Zn doped CaCu3Ti4O12 thin films

Microstructure and electrical properties of Lu2O3-doped ZnO-Bi2O3-based varistor ceramics

The CaCu3-xZnxTi4O12 (CCZTO) (x=0, 0.06, 0.1, 0.2) ceramics were prepared by Sol–gel method. The XRD pattern shows that crystal structure of the sample with no Zn is basically single-phase. The SEM results indicate that the samples have porous structures and the gain size decreases with the content of Zn increasing. The dielectric properties of CCZTO were analyzed by Agilent 4294A. The experimental results show that the dielectric constants are less than that in other papers reported obviously because of their mesoporous structures. With the little doping amount(x=0.06, 0.1), a sharp decrease happened in the dielectric constant (er). The higher er was found when x=0.2, but its dielectric loss (D) had greatly increased and frequency stability of dielectric property became worse. The uniformity of gains was put forward to explain the results which showed great impact on the dielectric constant.

Yue-e Fan

Papers

Microstructure and electrical properties of Lu2O3-doped ZnO-Bi2O3-based varistor ceramics

Dielectric Properties of Zn-Doped CCTO Ceramics by Sol-Gel Method