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Yukihiro Iwata

Researcher at Panasonic

Publications -  32
Citations -  194

Yukihiro Iwata is an academic researcher from Panasonic. The author has contributed to research in topics: Laser & Liquid fuel. The author has an hindex of 7, co-authored 32 publications receiving 194 citations.

Papers
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Patent

Video display device

TL;DR: In this paper, a panel supporting thin plate 6 which is on the back of a display panel and holds a display via a heat conductive sheet 34, and a main supporting plate 5 for holding the panel supporting the thin plate is arranged.
Patent

Fluorescent X-ray analysis method and fluorescent X-ray analysis apparatus

TL;DR: In this paper, the concentration of trace elements such as Cd, Pb and Hg contained in parts for electronic or electric equipment is determined by irradiating the sample with an X-ray so as to identify whether the type of the sample is a nonmetal-based material or a metal-based one.
Patent

Fluorescent x-ray analyzer

TL;DR: In this paper, the authors proposed an accurate alignment of a sample with a fluorescent X-ray analyzer, which consists of a case 4 having a sample stage 5 on which a sample is placed, an Xray tube 8 which is arranged inside the case 4 and irradiates Xray to the sample, a detector 11 which is placed inside case 4 to detect fluorescent X rays from the sample and a laser 9 which was arranged inside case 5 to irradiate laser light to the sampled sample.
Patent

Impact-resistant device for portable information processing terminal

TL;DR: In this article, an impact-resistant structure capable of protecting an incorporated device from its drop impact by sufficiently absorbing an impact energy even at the time of making thin cushioning materials (impact absorber) to be used for the incorporated device of a portable information processing terminal.
Patent

Semiconductor laser device and a method of mounting a semiconductor laser component on a submount

TL;DR: In this article, a method of mounting a semiconductor laser component capable of preventing deterioration of laser characteristics and destruction of the semiconductor component due to a rise in temperature and a residual stress of the component is presented.