An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

In fabricating a thin film transistor, an active layer comprising a silicon semiconductor is formed on a substrate having an insulating surface Hydrogen is introduced into The active layer A thin film comprising SiO x N y is formed to cover the active layer and then a gate insulating film comprising a silicon oxide film formed on the thin film comprising SiO x N y  Also, a thin film comprising SiO x N y is formed under the active layer The active layer includes a metal element at a concentration of 1×10 15 to 1×10 19 cm −3 and hydrogen at a concentration of 2×10 19 to 5×10 21 cm −3 

Semiconductor device and method for forming the same

Disclosed are a liquid crystal display device which reduces the number of masks and improves an aperture ratio, and a method for fabricating the same. The liquid crystal display device includes gate and data lines perpendicularly intersecting on a substrate having pixel and pad parts; a thin film transistor on the substrate at the intersection of the gate and data lines; a pixel electrode on the substrate at the pixel part and connected directly to a drain electrode of the thin film transistor; an insulating film on the overall surface of the substrate including the pixel electrode and the thin film transistor; an organic film on the insulating film over the thin film transistor and the data line; and a common electrode of slit shapes overlapping the pixel electrode such that the insulating film is interposed between the common electrode and the pixel electrode.

Liquid crystal display device and method for fabricating the same

An active matrix display device having a pixel structure in which pixel electrodes, gate wirings and source wirings are suitably arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the number of steps. The device comprises a gate electrode and a source wiring on an insulating surface, a first insulating layer on the gate electrode and on the source wiring, a semiconductor layer on the first insulating film, a second insulating layer on the semiconductor film, a gate wiring connected to the gate electrode on the second insulating layer, a connection electrode for connecting the source wiring and the semiconductor layer together, and a pixel electrode connected to the semiconductor layer.

Semiconductor Device and Method of Fabricating the Same

An electro-optical device having a plurality of pixels including a plurality of EL elements, wherein the electro-optical device provides a gray scale display by controlling a period of time at which the plurality of the EL elements emit light in one frame period; the plurality of the EL elements have a first electrode and a second electrode; the first electrode is held at a constant potential; and a potential of the second electrode changes in such a manner that a polarity of an EL driving voltage, which is a difference between the potentials applied to the first and second electrodes, is inverted for each one frame period.

Electro-optical device

In an image display device an electrode of a storage condenser is composed of a drain electrode while the other electrode of said condenser is composed of a gate line of substantially the same width as that of said drain electrode and is provided across an insulating layer or of another conductive layer provided on a substrate across an insulating layer. The drain electrode constituting an electrode of the accumulating condenser may also be so positioned as to bridge two adjacent gate lines provided across an insulating layer and a semiconductor layer thereby forming the storage condenser.

Display device with a thin film transistor and storage condenser

A display apparatus comprises a first substrate provided with a thin film transistor array as a driving switching element and a second substrate provided with another electrode, and produces a display by electro-optical change generated between these substrates. Visibility of the display is improved in such a way that rays of light incident on the display apparatus are converted into diffusion light. Photoconductive material, in particular amorphous silicon, can be used by covering semiconductive portions of the thin film transistor array of the display apparatus with an intercepting member. In a display apparatus using a thin film transistor array as a driving switching element, a conductive surface electrically insulated from gate lines on a substrate on where the gate lines for the thin film transistor array are formed, such conductive surface acts as a counter electrode of capacitors for storing charge. Therefore the counter electrode of capacitors is separately formed from gate lines, and writing driving voltage can be set without taking effects of voltage change of gate lines into consideration. Shading layers comprising a plurality of color filters also cover each of the thin film transistors.

Display process and apparatus thereof incorporating overlapping of color filters

PURPOSE:To eliminate the distortion of VD-ID curve by a method wherein a gate electrode is formed on a semiconductor layer through an insulation layer, and N layers are formed in parallel isolated from each other on a clean surface of the semiconductor layer. CONSTITUTION:An a-Si-TFT is formed on a substrate 106 made of glass, ceramics or the like by laminating in sequence a gate electrode 101, an electrical insulation layer 104 designed to cover the gate electrode 101 and a semiconductor layer 105 composed of hydrided and/or fluorided amorphous silicon, and constructed to have a structure in which the first N layer 107-1, the second N layer 107-2 are mounted isolated from each other in a parallel relation on the surface 108 of the semiconductor layer 105, and in addition, a source electrode 102 is mounted on the first N layer 107-1 and a drain electrode 103 on the second N layer 107-2, respectively. The N layers are formed during the surface 108 of the semiconductor 105 being in the clean state just after the formation of the layer, thereby a satisfactory ohmic contact is formed on the interface of the semiconductor layer 105 and the N layers 107.

Amorphous silicon thin film transistor and manufacture thereof

An apparatus and method for producing an optical recording medium or an optical recording medium substrate sheet forms an photo-curable resin layer on at least one of a substrate sheet and a stamper which undergoes elastic deformation. The stamper bears a pattern corresponding with preformatting information and is brought into close contact with the substrate sheet wherein the photo-curable resin layer is interposed between them and cured.

Yukitoshi Okubo

Papers

Display device with a thin film transistor and storage condenser

Display process and apparatus thereof incorporating overlapping of color filters

Amorphous silicon thin film transistor and manufacture thereof

Optical recording medium substrate sheet producing apparatus having roll stamper with elastomer layer of predetermined hardness

Biasing liquid crystal displays having capacitors and transistors