An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

Substrate Processing Apparatus

Embodiments of the present invention relate to an apparatus and method of plasma assisted deposition by generation of a plasma adjacent a processing region. One embodiment of the apparatus comprises a substrate processing chamber including a top shower plate, a power source coupled to the top shower plate, a bottom shower plate, and an insulator disposed between the top shower plate and the bottom shower plate. In one aspect, the power source is adapted to selectively provide power to the top shower plate to generate a plasma from the gases between the top shower plate and the bottom shower plate. In another embodiment, a power source is coupled to the top shower plate and the bottom shower plate to generate a plasma between the bottom shower plate and the substrate support. One embodiment of the method comprises performing in a single chamber one or more of the processes including, but not limited to, cyclical layer deposition, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition; plasma-enhanced chemical vapor deposition; and/or chemical vapor deposition.

Apparatus and method for plasma assisted deposition

An apparatus and method for performing a cyclical layer deposition process, such as atomic layer deposition is provided. In one aspect, the apparatus includes a substrate support having a substrate receiving surface, and a chamber lid comprising a tapered passageway extending from a central portion of the chamber lid and a bottom surface extending from the passageway to a peripheral portion of the chamber lid, the bottom surface shaped and sized to substantially cover the substrate receiving surface. The apparatus also includes one or more valves coupled to the gradually expanding channel, and one or more gas sources coupled to each valve.

Gas delivery apparatus for atomic layer deposition

Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a lid assembly for conducting a vapor deposition process within a process chamber is provided which includes an insulation cap and a plasma screen. In one example, the insulation cap has a centralized channel configured to flow a first process gas from an upper surface to an expanded channel and an outer channel configured to flow a second process gas from an upper surface to a groove which is encircling the expanded channel. In one example, the plasma screen has an upper surface containing an inner area with a plurality of holes and an outer area with a plurality of slots. The insulation cap may be positioned on top of the plasma screen to form a centralized gas region with the expanded channel and a circular gas region with the groove.

Apparatus and process for plasma-enhanced atomic layer deposition

A method of delivering two or more mutually-reactive reaction gases when a predetermined film is deposited on a substrate, and a shower head used in the gas delivery method, function to increase the film deposition rate while preventing formation of contaminating particles. In this method, one reaction gas is delivered toward the edge of the substrate, and the other reaction gases are delivered toward the central portion of the substrate, each of the reaction gases being delivered via an independent gas outlet to prevent the reaction gases from being mixed. In the shower head, separate passages are provided to prevent the first reaction gas from mixing with the other reaction gases by delivering the first reaction gas from outlets formed around the edge of the bottom surface of the shower head. The other reaction gases are delivered from outlets formed in the central portion of the bottom surface of the shower head. Accordingly, one of the mutually-reactive gases is delivered toward the central portion of the substrate, and the others are delivered toward the edge of the substrate.

Method of delivering gas into reaction chamber and shower head used to deliver gas

PROBLEM TO BE SOLVED: To provide a reaction chamber gas flowing method simultaneously solving the problems of the increase of contaminated particles and the drop of a vapor deposition rate and to provide a shower head used therefor. SOLUTION: So as to prevent the mutual mixing of 1st reaction gas B and the remaining gas A, via individual gas inlet ports, respectively, the 1st reaction gas B is flowed in toward the edge parts of a substrate 110, and the remaining gas A is flowed in toward the center part of the substrate 110. Moreover, so as to prevent the mutual mixing of the 1st reaction gas B and the remaining gas A in a shower head, passages are individually provided, the emmision ports 140 of the 1st reaction gas is formed on the edge parts of the bottom face of the shower head, and the emission port 130 of the remaining gas A is formed on the center part thereof. In this way, the formation of contaminated particles at the inside of the shower head and the reaction chamber 100 is suppressed, and the vapor deposition rate is increased.

Reaction chamber gas flowing method and shower head used therefor

PURPOSE: A method for supplying a gas to a reaction chamber and an improved shower head used for the method are provided to prevent a generation of undesirable particles caused by reactions of different gases in the shower head without lessening a deposition rate. CONSTITUTION: A shower head(60) includes a first and a second gas supply lines(62,64) and fuzzy gas supply lines(68) each respectively connected to each gas supply line(62,64). The first gas supply line(62) is extended to plural first outlet holes(72) peripherally disposed in the bottom surface of the shower head(60), whereas the second gas supply line(64) is extended to plural second outlet holes(74) centrally disposed in the bottom surface of the shower head(60). The first and the second gas supply lines(62,64) are separately introduced into the shower head(60), and further independently connected to the first and the second outlet holes(72,74) so that gases supplied from the respective supply lines(62,64) may not mix with each other in the shower head(60).

Yun-sook Chae

Papers

Method of delivering gas into reaction chamber and shower head used to deliver gas

Reaction chamber gas flowing method and shower head used therefor

Method for supplying gas to reaction chamber and shower head used therefor