An ion source (1) for ion implantation system includes a vaporizer (2) for producing process gas; an electron source (12) for directing an electron beam (32) to ionize the process gas within an ionization volume (16); a beam dump (11); an ionization chamber (5); and an extraction aperture (37) for extracting an ion beam.

Ion implantation ion source, system and method

Engineered nanomaterials (ENMs) are increasingly being used in the food industry. In order to assess the efficacy and the risks of these materials, it is essential to have access to methods that not only detect the nanomaterials, but also provide information on the characteristics of the materials (e.g., size and shape).

This review presents an overview of electron microscopy (EM)-based methods that have been, or have the potential to be, applied to imaging ENMs in foodstuffs. We provide an overview of approaches to sample preparation, including drying, chemical treatment, fixation and cryogenic methods. We then describe standard and non-standard EM-based approaches that are available for imaging prepared samples. Finally, we present a strategy for selecting the most appropriate method for a particular foodstuff.

Characterization of nanomaterials in food by electron microscopy

Ion implantation with high brightness, ion beam by ionizing gas or vapor, e.g. of dimers, or decaborane, by direct electron impact ionization adjacent the outlet aperture (46, 176) of the ionization chamber (80; 175)). Preferably: conditions are maintained that produce a substantial ion density and limit the transverse kinetic energy of the ions to less than 0.7 eV; width of the ionization volume adjacent the aperture is limited to width less than about three times the width of the aperture; the aperture is extremely elongated; magnetic fields are avoided or limited; low ion beam noise is maintained; conditions within the ionization chamber are maintained that prevent formation of an arc discharge. With ion beam optics, such as the batch implanter of Figure (20), or in serial implanters, ions from the ion source are transported to a target surface and implanted; advantageously, in some cases, in conjunction with acceleration-deceleration beam lines employing cluster ion beams. Also disclosed are electron gun constructions, ribbon sources for electrons and ionization chamber configurations. Forming features of semiconductor devices, e.g. drain extensions of CMOS devices, and doping of flat panels are shown.

Ion implantation system and control method

The vibration criterion (VC) curves, commonly used in the design of facilities which house vibration-sensitive instrumentsand tools, were developed by the author and his colleagues, in the early 80's, published by SPIE in 1991 and by lEST in1993. Each ofthe criterion curves A through E is associated with a "line width" or "detail size" which was an attempt by theauthors to describe the capabilities of the tools with which each curve might be associated. In the years since the curves weredeveloped there have been substantial developments in tool design and isolation. In this paper the curves are reviewed in thecontext ofpresent-day tools and processes. Changes are proposed where these might be justified.Keywords: Vibration Criteria, facility design, fabrication tools, microelectronics fabrication, medical and pharmaceuticalresearch, vibration-sensitive equipment. 1. INTRODUCTION The criterion curves were developed in the 1980's in response for a need for design standards to accommodate a wide rangeof tools and instruments used by the microelectronics, medical and biopharmaceutical industries. The curves and descriptorsthat accompanied them were necessarily "generic" in the sense that they were intended to meet the needs of all tools within

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Generic Vibration Criteria for Vibration-Sensitive Equipment

A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is higher than the first regularity.

Particle-optical systems and arrangements and particle-optical components for such systems and arrangements

A focused ion beam (FIB) system produces a final beam spot size down to 0.1 μm or less and an ion beam output current on the order of microamps. The FIB system increases ion source brightness by properly configuring the first (plasma) and second (extraction) electrodes. The first electrode is configured to have a high aperture diameter to electrode thickness aspect ratio. Additional accelerator and focusing electrodes are used to produce the final beam. As few as five electrodes can be used, providing a very compact FIB system with a length down to only 20 mm. Multibeamlet arrangements with a single ion source can be produced to increase throughput. The FIB system can be used for nanolithography and doping applications for fabrication of semiconductor devices with minimum feature sizes of 0.1 μm or less.

Focused ion beam system

Multicusp ion sources are capable of producing ions with low axial energy spread which are necessary in applications such as ion projection lithography (IPL) and radioactive ion beam production. The addition of a radially extending magnetic filter consisting of a pair of permanent magnets to the multicusp source reduces the energy spread considerably due to the improvement in the uniformity of the axial plasma potential distribution in the discharge region. A coaxial multicusp ion source designed to further reduce the energy spread utilizes a cylindrical magnetic filter to achieve a more uniform axial plasma potential distribution. The coaxial magnetic filter divides the source chamber into an outer annular discharge region in which the plasma is produced and a coaxial inner ion extraction region into which the ions radially diffuse but from which ionizing electrons are excluded. The energy spread in the coaxial source has been measured to be 0.6 eV. Unlike other ion sources, the coaxial source has the capability of adjusting the radial plasma potential distribution and therefore the transverse ion temperature (or beam emittance).

Low energy spread ion source with a coaxial magnetic filter

A plasma-formed ion-beam projection lithography (IPL) system eliminates the acceleration stage between the ion source and stencil mask of a conventional IPL system. Instead a much thicker mask is used as a beam forming or extraction electrode, positioned next to the plasma in the ion source. Thus the entire beam forming electrode or mask is illuminated uniformly with the source plasma. The extracted beam passes through an acceleration and reduction stage onto the resist coated wafer. Low energy ions, about 30 eV, pass through the mask, minimizing heating, scattering, and sputtering.

Yung-Hee Yvette Lee

Papers

Focused ion beam system

Low energy spread ion source with a coaxial magnetic filter

Plasma formed ion beam projection lithography system