Effects of Ag doping on the crystallinity and optical properties of zinc oxide (ZnO) nanoparticles have been studied by x-ray diffraction, diffuse reflectance spectroscopy, micro-Raman, and photoluminescence spectroscopy. It has been observed that while Ag-doping at low concentration improves the optoelectronic properties of ZnO nanostructures, Ag-doping at high concentrations drastically modify the emission behavior and lattice vibrational characteristics of the nanostructures. High Ag content in ZnO nanostructures causes lattice deformation, induces silent vibrational modes in Raman spectra, and reduces excitonic UV emission due to concentration quenching.

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Photoluminescence and Raman Scattering in Ag-doped ZnO Nanoparticles

Thermographic phosphors for thermometry: A survey of combustion applications

Photoluminescence and Raman scattering of Cu-doped ZnO films prepared by magnetron sputtering

Highly oriented Ga-doped zinc oxide (ZnO) nanorod arrays have been prepared on a ZnO-buffered silicon substrate in an aqueous solution, which is a mixture of methenamine (C(6)H(12)N(4)), zinc nitrate hexahydrate (Zn(NO(3))(2)·6H(2)O), and gallium nitrate hydrate (Ga(NO(3))(3)·xH(2)O). The microstructure characteristics and optical properties of the nanorod arrays were analyzed using different characterization techniques including field-emission scanning electron microscopy (FESEM), x-ray photoelectron spectroscopy (XPS), and photoluminescence (PL). The experimental results show that the morphology, density, and surface compositions of ZnO nanorod arrays are sensitive to the concentration of gallium nitrate hydrate. The PL spectra of all ZnO nanorod arrays show three different emissions, including UV (ultraviolet), yellow, and NIR (near infrared) emissions. With the increase in the Ga doping level, the luminescence quality of ZnO nanorods has been improved. The peak of UV emission has a small redshift, which can be ascribed to the combined effect of size and Ga doping. Furthermore, Ga doping has caused defects that respond to NIR emission.

https://iopscience.iop.org/article/10.1088/0957-4484/19/7/075607/pdf

Microstructural and optical characteristics of solution-grown Ga-doped ZnO nanorod arrays.

Band gap widening and narrowing in Cu-doped ZnO thin films

Highly c-axis oriented Ga-doped ZnO films (GZO) have been grown on sapphire (0001) substrates by pulsed laser deposition (PLD) method. Photoluminescence (PL) spectra indicate that Ga atoms have a large effect on the luminescent properties of ZnO films. PL spectra of GZO films show near band edge (NBE) emissions and broad orange deep-level emissions. The NBE emission shifts to higher energy region and the intensity decreases with the increase of Ga concentration. The blue shift of NBE emission results from Burstein-Moss effect. The quenching of NBE emission is ascribed to the noradiative recombination. The orange emission is related to the oxygen vacancies.

Z. F. Liu

Papers

Photoluminescence of ZnO:Ga Thin Films Fabricated by Pulsed Laser Deposition Technique