Tin sulfide is being widely investigated as an earth-abundant light harvesting material, but recorded efficiencies for SnS fall far below theoretical limits. We describe the synthesis and characterization of the single-crystal tin sulfides (SnS, SnS2, and Sn2S3) through chemical vapor transport, and combine electronic structure calculations with time-resolved microwave conductivity measurements to shed light on the underlying electrical properties of each material. We show that the coexistence of the Sn(II) and Sn(IV) oxidation states would limit the performance of SnS in photovoltaic devices due to the valence band alignment of the respective phases and the “asymmetry” in the underlying point defect behavior. Furthermore, our results suggest that Sn2S3, in addition to SnS, is a candidate material for low-cost thin-film solar cells.

http://pubs.acs.org/doi/pdf/10.1021/cm403046m

Synthesis, Characterization, and Electronic Structure of Single-Crystal SnS, Sn2S3, and SnS2

Hexagonal single crystal nanosheets of Nd3+ doped PbI2 were effortlessly synthesized via microwave-assisted technique under a power of 700 W and in a duration of 15 minutes with a homogeneous morphology. X-ray diffraction, energy dispersive X-ray spectroscope, scanning electron microscope, FT-Raman, UV-Visible, photoluminescence and dielectric measurement were employed to study the product. High purity, single phase and presence of Nd3+ doping was confirmed. SEM study confirm the formation of nanorods and single crystal nanosheets of very few nanometers in size. Robust vibrational analysis has been carried out and the observed bands are assigned to the vibration modes of E21, A11, A12, 2E21 and 2E11, respectively. These bands are red-shifted when compare to the corresponding bulk values which indicate relaxed nanostructure formation and occurrence of confinement effect. The thickness of the synthesized single crystal nanosheets are found to be in the range of ~20 to 30 nm. The energy band gap was calculated and found to be 3.35, 3.34, 3.42 and 3.39 eV for pure, 1, 3 and 5% Nd3+ doped lead iodide, respectively. The clear blue luminescence has been observed at 440 nm and 466 nm when excited at 250 nm and 280 nm respectively. Dielectric and ac electrical conductivity was also measured and discussed.

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Tailoring the structural, morphological, optical and dielectric properties of lead iodide through Nd 3+ doping

Structural, optical and photocatalysis properties of sol–gel deposited Al-doped ZnO thin films

The ability to solution deposit semiconductor films has received a great deal of recent attention as a way to potentially lower costs for many optoelectronic applications; however, most bulk semiconductors are insoluble in common solvents. Here we describe a novel and relatively nonhazardous binary solvent mixture comprised of 1,2-ethanedithiol and 1,2-ethylenediamine that possesses the remarkable ability to rapidly dissolve a series of nine bulk V2VI3 chalcogenides (V = As, Sb, Bi; VI = S, Se, Te) at room temperature and atmospheric pressure. After solution deposition and low-temperature annealing, the chalcogenides can be fully recovered as good quality, highly crystalline thin films with negligible organic content, as demonstrated for Sb2Se3 and Bi2S3.

Alkahest for V2VI3 chalcogenides: dissolution of nine bulk semiconductors in a diamine-dithiol solvent mixture.

Tin sulfide solar cells show relatively poor efficiencies despite attractive photovoltaic properties, and there is difficulty in identifying separate phases, which are also known to form during Cu2ZnSnS4 depositions. We present X-ray photoemission spectroscopy (XPS) and inverse photoemission spectroscopy measurements of single crystal SnS, SnS2, and Sn2S3, with electronic-structure calculations from density functional theory (DFT). Differences in the XPS spectra of the three phases, including a large 0.9 eV shift between the 3d5/2 peak for SnS and SnS2, make this technique useful when identifying phase-pure or mixed-phase systems. Comparison of the valence band spectra from XPS and DFT reveals extra states at the top of the valence bands of SnS and Sn2S3, arising from the hybridization of lone pair electrons in Sn(II), which are not present for Sn(IV), as found in SnS2. This results in relatively low ionization potentials for SnS (4.71 eV) and Sn2S3 (4.66 eV), giving a more comprehensive explanation as to...

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Band Alignments, Valence Bands, and Core Levels in the Tin Sulfides SnS, SnS2, and Sn2S3: Experiment and Theory

The zinc oxide thin films, highly transparent, doped aluminium were prepared on glass substrates by the reactive chemical spray method. The incorporation nature of Al atoms in the ZnO lattice was determined by X-ray diffraction and optical analyses. Indeed, for low doping ⩽2%, the results of X-ray spectra analysis show a simultaneous reduction of lattice parameters (a and c), this variation, which follows VEGARD’s law, tends to indicate a substitution of Zn by Al. By against for doping >2% the increase in the lattice parameters thus the grain sizes, in accordance with the VEGARD’s law can be explained by occupation of the interstitial sites by Al atoms. Beyond 4%, the material tends to get disorderly and the crystallites orientation is random. The studied optical properties show that the variation of the optical gap follows a law of the x3/2 form for x

Z. Kebbab

Papers

Site location of Al-dopant in ZnO lattice by exploiting the structural and optical characterisation of ZnO:Al thin films

Optical and electrical properties of Bi2S3 films deposited by spray pyrolysis

Optical and electrical properties of Sn2S3 thin films grown by spray pyrolysis

First principles calculations of structural, electronic and optical properties of zinc aluminum oxide

Birefringence of optically uni-axial ternary semiconductors