A conductive layer, including a lower layer made of refractory metal such as chromium, molybdenum, and molybdenum alloy and an upper layer made of aluminum or aluminum alloy, is deposited and patterned to form a gate wire including a gate line, a gate pad, and a gate electrode on a substrate. At this time, the upper layer of the gate pad is removed using a photoresist pattern having different thicknesses depending on position as etch mask. A gate insulating layer, a semiconductor layer, and an ohmic contact layer are sequentially formed. A conductive material is deposited and patterned to form a data wire including a data line, a source electrode, a drain electrode, and a data pad. Next, a passivation layer is deposited and patterned to form contact holes respectively exposing the drain electrode, the gate pad, and the data pad. At this time, the contact hole on the gate pad only exposes the lower layer of the gate pad, and the gate insulating layer and the passivation layer completely cover the upper layer of the gate pad. Next, indium tin oxide is deposited and patterned to form a pixel electrode, a redundant gate pad, and a redundant data pad respectively connected to the pixel electrode, the gate pad, and the data pad.

Thin film transistor array panels for a liquid crystal display and a method for manufacturing the same

A method for providing the layout design of semiconductor integrated circuit that is capable of promoting the reduction of the circuit pattern area is provided. A hole pattern is disposed at the mesh point which is an intersecting point of mutually orthogonal virtual grid lines and another hole pattern is not disposed at the adjacent mesh point that is the mostly closed mesh point having the hole pattern thereon.

Method for providing layout design and photo mask

In an exposure apparatus, an exposure of a substrate (P) is carried out by filling at least a portion of the space between a projection optical system (PL) and the substrate (P) with a liquid (50) and projecting the image of a pattern onto the substrate (P) through the projection optical system (PL). An optical element (60) and a lens-barrel (PK), which are in contact with the liquid (50) when the substrate (P) is moved, are subjected to a surface treatment for adjusting the affinity with the liquid (50). Consequently, formation of air bubbles in the liquid between the projection optical system and the substrate is suppressed and the liquid is always held between the projection optical system and the substrate, thereby creating a good immersion state.

Exposure apparatus, exposure method, and method for manufacturing device

Techniques are provided for extending the use of phase shift techniques to implementation of masks used for complex layouts in the layers of integrated circuits, beyond selected critical dimension features such as transistor gates to which such structures have been limited in the past. The method includes identifying features for which phase shifting can be applied, automatically mapping the phase shifting regions for implementation of such features, resolving phase conflicts which might occur according to a given design rule, and application of sub-resolution assist features within phase shift regions and optical proximity correction features to phase shift regions. Both opaque field phase shift masks and complementary binary masks defining interconnect structures and other types of structures that are not defined using phase shifting, necessary for completion of the layout of the layer are produced.

Phase shift masking for complex patterns

On the occasion of the aligning process to transfer a predetermined pattern to a semiconductor wafer by irradiating a photoresist on the semiconductor wafer with an aligning laser beam of the modified lighting via a photomask MK, the photomask MK allocating, to provide periodicity, the main apertures to transfer the predetermined pattern as the apertures formed by removing a part of the half-tone film on the mask substrate and the auxiliary apertures not resolved on the semiconductor wafer as the apertures formed by removing a part of the half-tone film is used to improve the resolution of the pattern

Fabrication method of semiconductor integrated circuit device

PROBLEM TO BE SOLVED: To obtain desired mask patterns by partially using the effect of a phase shift mask. SOLUTION: The mask patterns are formed of light shielding films 2 and translucent films 3 on a transparent substrate 1. The light shielding films 2 are composed by substituting the ends among the pattern shapes of the intrinsic mask with the translucent films 3. The translucent films 3 have transmittance of about 4 to 15% and give rise to a phase difference of about 180 deg. between the light transmitted therethrough and the light not transmitted therethrough. As a result, the light intensity at the edges of the translucent films 3 is steepened and the degeneracy of the patterns transferred to a photoresist is prevented. Since the light shielding films 2 are partly substd. with the translucent films, the design and production thereof are easy.

Photomask and its production

PURPOSE:To improve the uniformity of transmittance within the mask plane of a phase shift mask CONSTITUTION:A light shielding film 3 on an etching stopper film 2 is patterned to form light shielding film patterns and thereafter, the etching stopper film in the regions to be formed with phase shifter films is selectively removed to form apertures 6 A transparent film 7 formed over the entire surface is then patterned to form the phase shifter films 7a on the apertures 6 and thereafter, all the exposed etching stopper films 3 are removed by etching, by which the uniformly of the transmittance of the light transmissive regions is improved

Production of phase shift mask

PURPOSE: To enable the transfer of desired patterns at desired pattern widths and decreased stages with a phase shift mask of a chromium-less system. CONSTITUTION: At least a part of the edges of phase shifters 3 consisting of a transparent material formed on a transparent substrate 1 are provided with dummy pattern edges 4 formed of a part of the phase shifters 3 so as to exist along the edges. The patterns in the edge parts of the phase shifters 3 are erased or the pattern width is made finer by changing the intervals of the edges of the dummy patterns 4 and the phaseg shifters, by which the exposing stage is simplified and the degree of freedom of pattern formation is enhanced. COPYRIGHT: (C)1995,JPO

Phase shift mask

PROBLEM TO BE SOLVED: To adjust the size of a mask image transferred onto a semiconductor substrate owing to a black defect of a mask. SOLUTION: It is decided (b) whether a defect found by defect inspection (a) of the mask results from excessive chromium or an insufficient light shield part at an opening part. When the light shield part is excessive, the light shield part is removed temporarily a little large. Namely, correction is performed (c) so that the opening part is within the range between design size and (design size plus 2Δ), where ±Δ is the position precision of the correcting device. Then the size after actual correction is measured and a proper transmission rate of the correction part is determined. Here, light intensity simulation (d) is performed according to the result of size measurement (c) after correction to find proper transmissivity. Thus, what transmissivity the corrected auxiliary pattern needs to have so as to obtain the same effect with an ordinary fine auxiliary pattern is found. Then Ga ions are implanted in the corrected part by using FIB(focused ion beam) to adjust the transmissivity of the corrected part to a specific value (e).

Mask correcting method

PROBLEM TO BE SOLVED: To reduce drawing time in a drawing process in a variable rectangle method. SOLUTION: The method comprises: a rectangle approximation step S30 of approximating a planned pattern by rectangles to generate a rectangle approximation pattern; steps S40, S50 of generating a first correction pattern based on the rectangle approximation pattern; and a step S60 of generating an irradiation pattern by enlarging the first correction pattern by a process bias Δ. The process bias Δ represents a reduction amount of a pattern to be actually formed on a drawing object with respect to the irradiation pattern. The first correction step includes a Δ shift step of generating a Δ shift pattern based on the rectangle approximation pattern; and upon generating the Δ shift pattern in the Δ shift step, a side portion of the rectangle approximation pattern is shifted by an amount corresponding to the process bias Δ. COPYRIGHT: (C)2008,JPO&INPIT

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Papers

Photomask and its production

Production of phase shift mask

Phase shift mask

Mask correcting method

Method for generating irradiation pattern data, method for manufacturing mask, and drawing system

直生 安里

Papers

Photomask and its production

Production of phase shift mask

Phase shift mask

Mask correcting method

Method for generating irradiation pattern data, method for manufacturing mask, and drawing system

直生安里