Z
Zhong-Jie Yang
Researcher at National Chung Hsing University
Publications - 11
Citations - 218
Zhong-Jie Yang is an academic researcher from National Chung Hsing University. The author has contributed to research in topics: Light-emitting diode & Etching (microfabrication). The author has an hindex of 6, co-authored 11 publications receiving 196 citations.
Papers
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Journal ArticleDOI
Enhanced light output in nitride-based light-emitting diodes by roughening the mesa sidewall
TL;DR: In this paper, a nitride-based light emitting diode with a mesa sidewall roughening process that increases light output power was reported. But, the performance of the PEC treated GaN-Ga/sub 2/O/sub 3/air layers was not evaluated.
Journal ArticleDOI
Enhanced Light Output Power in InGaN Light-Emitting Diodes by Fabricating Inclined Undercut Structure
Chia-Feng Lin,Zhong-Jie Yang,Bing-Hua Chin,Jing-Hui Zheng,Jing-Jie Dai,Bing-Cheng Shieh,Cheng-Ching Chang +6 more
TL;DR: In this paper, the InGaN-based light-emitting diode (LED) with an inclined undercut structure is fabricated through the photoelectrochemical two-step process to increase light extraction efficiency.
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GaN/AlGaN ultraviolet light-emitting diode with an embedded porous-AlGaN distributed Bragg reflector
Guan-Jhong Wang,Bo-Syun Hong,Yi-Yun Chen,Zhong-Jie Yang,Tzong-Liang Tsai,Yung-Sen Lin,Chia-Feng Lin +6 more
TL;DR: In this paper, a GaN/AlGaN-based ultraviolet light-emitting diode (LED) structure with an embedded porous-alGaN reflector was fabricated by a doping-selective electrochemical (EC) wet-etching process.
Journal ArticleDOI
Ultraviolet GaN Light-Emitting Diodes with Porous-AlGaN Reflectors.
Feng-Hsu Fan,Zun-Yao Syu,Chia-Jung Wu,Zhong-Jie Yang,Bo-Song Huang,Guan-Jhong Wang,Yung-Sen Lin,Hsiang Chen,Chyuan Hauer Kao,Chia-Feng Lin +9 more
TL;DR: A GaN/AlGaN ultraviolet light emitting diode (UV-LED) structure with a porous AlGaN reflector structure has been demonstrated and the light output power was higher than that of the non-treated UV-LED structure due to the high light reflectance on the embedded porous Al GaN reflectors.
Journal ArticleDOI
High-Efficiency InGaN Light-Emitting Diodes Via Sidewall Selective Etching and Oxidation
TL;DR: In this article, photoelectrochemical etching and oxidation of the sidewall structures of InGaN light-emitting diodes has been utilized to significantly improve optical emission efficiency.