A light-absorbing layer is selectively formed over an insulating surface, an insulating layer is formed over the insulating surface and the light-absorbing layer, the insulating surface, the light-absorbing layer, and the insulating layer are irradiated with laser light to selectively remove only the insulating layer above the light-absorbing layer in an irradiated region of the insulating layer so that an opening reaching the light-absorbing layer is formed in the insulating layer, and a conductive film is formed in the opening so as to be in contact with the light-absorbing layer. By forming the conductive film in the opening so as to be in contact with the exposed light-absorbing layer, the conductive film can be electrically connected to the light-absorbing layer with the insulating layer interposed therebetween.

Method for manufacturing display device

A plasma processing apparatus wherein a layer structure consisting of plural layers formed in stack one upon another on a semiconductor wafer placed on the sample holder located in the process chamber, is etched with plasma generated in the process chamber by supplying high frequency power to the electrode disposed in the sample holder, the apparatus comprising a ring-shaped electrode disposed above the electrode and around the periphery of the top portion of the sample holder, an outer circumferential ring of dielectric material disposed above the ring-shaped electrode and opposite to the plasma, and a power source for supplying power at different values to the ring-shaped electrode depending on the sorts of layers of the layer structure.

Plasma Processing Apparatus

Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum.

/pdf/method-and-apparatus-for-depositing-atomic-layers-on-a-2m38pecew6.pdf

Method and apparatus for depositing atomic layers on a substrate

PROBLEM TO BE SOLVED: To provide a method for manufacturing a polarizing plate which is capable of uniformly pressurizing a laminate (a polarizing film and a transparent film) constituting a polarizing plate even if using sticking rolls of which the diameter is relatively smaller, and an apparatus for manufacturing a polarizing plate.SOLUTION: A method for manufacturing a polarizing plate includes: an adhesive coating process for applying an active energy ray curable adhesive to one surface of a transparent film or to one surface or both surfaces of a polarizing film; a sticking process for sticking the transparent film and the polarizing film by pressing at least one of a pair of sticking rolls toward a direction of the other sticking roll by using at least one pressing roll provided in contact with the sticking rolls in a state where a laminate formed by laminating the transparent film on one surface or both surfaces of the polarizing film via the adhesive is interposed between the pair of sticking rolls rotating in a conveyance direction; and an active energy ray irradiation process for curing the adhesive by irradiating the laminate with the active energy ray. A diameter of the center part of the pressing roll is larger than a diameter of the center part of the sticking rolls in contact with the pressing roll.

Method for manufacturing polarizing plate

A plasma processing device and a plasma processing method capable of maintaining stable plasma discharge, obtaining a sufficient plasma processing ability, and lowering the plasma temperature. The plasma processing device includes a plurality of electrodes, between which a discharge space is formed. A dielectric body is arranged at the discharge space side of at least one of the electrodes. A plasma generating gas is supplied to the discharge space and voltage is applied between the electrodes, so that discharge is caused in the discharge space under a pressure in the vicinity of the atmospheric pressure and plasma generated by this discharge is blown from the discharge space. In this plasma processing device, a waveform of the voltage applied between the electrodes is an alternating voltage waveform having no halt time. At least one of the rise time and the fall time of this alternating voltage waveform is set to 100 microseconds or below, the repetitious frequency is set to 0.5 to 1000 kHz, and the electric field intensity applied between the electrodes is set to 0.5 to 200 kV/cm.

Plasma processing device and plasma processing method

PROBLEM TO BE SOLVED: To provide a method of treating a base material with a normal pressure plasma which can treat the large-area base material, can treat the base material uniformly and at high speed, and, moreover, does not exert damage on the base material. SOLUTION: In a method of treating a base material to be treated with a discharge plasma, a solid dielectric is installed on the opposing surface of an electrode on at least one side of electrodes opposing to each other under a pressure in the vicinity of atmospheric pressure, process gas is introduced between the electrodes, and the discharge plasma obtainable by applying a pulse-shaped electric field to the process gas is induced to the base material to be treated arranged outside a discharge space to bring the discharge plasma into contact with the base material to be treated. By adopting this method, the large-area base material can be easily treated, and, moreover, it becomes possible to lighten an electrical and thermal burden to the base material to be treated during the treatment.

Method of treating base material with discharge plasma

PROBLEM TO BE SOLVED: To provide a discharge plasma treatment apparatus which can cope with high speed processing and large area processing, and does not damage a substrate and does not affect a thin film, or the like, generated on the substrate. SOLUTION: This discharge plasma treatment apparatus has a counter electrode comprising a voltage application electrode and a ground electrode, and at least one of the opposite surfaces of the electrodes is coated with a solid dielectric material. An electric field is applied between the electrodes of the counter electrode to generate glow discharge plasma between them. The generated glow discharge plasma is introduced to a substrate arranged outside of a plasma generating space so that the substrate is treated. The surfaces of the voltage application electrode and the ground electrode opposite to the substrate are coated with the solid dielectric material.

Discharge plasma treatment apparatus

PROBLEM TO BE SOLVED: To provide a method and an apparatus for dry etching even a large area wafer or substrate through a convenient arrangement under conditions of atmospheric pressure in the etching step of a semiconductor production process. SOLUTION: In the method and system of dry etching in a semiconductor production process, a solid state dielectric is disposed on at least one of the opposite faces of a pair of opposite electrodes under a pressure being close to the atmospheric pressure and a plasma, obtained by introducing a processing gas between the pair of opposite electrodes and applying a pulsating electric field thereto, is brought into contact with a basic material and used gas is discharged from the vicinity of contact part between the plasma and the basic material.

Method and apparatus for dry etching

PROBLEM TO BE SOLVED: To continuously generate uniform glow discharge plasma under pressure in the vicinity of atmospheric pressure regardless of a gas atmosphere in processing, and perform stable glow discharge plasma processing by setting voltage rising time not more than a specific valve, and setting electric field strength to a specific range in a device where an impressing electric field is converted into a pulse. SOLUTION: In glow discharge plasma processing, a pulse electric field on which electric field strength is 1 to 100kV/cm and rising time is not more than 100μs, is applied. In this device, a solid dielectric 16 is arranged on a lower electrode 15, and discharge plasma is generated in a space between the solid dielectric 16 and an upper electrode 14. Processing gas is supplied to a discharge plasma generating space 13 from a gas introducing pipe 18, and an upper surface of a base material 17 contacting with generating discharge plasma is processed. When both surfaces of the base material 17 are wished to be processed, the base material 17 is floatingly arranged in the discharge plasma generating space 13.

Glow discharge plasma processing method and device thereof

PROBLEM TO BE SOLVED: To provide a producing method in which glow discharge is continuously executed to form a thin coating film of fluorine-contg. compd. on a film substrate and applying it with an electrically conductive layer to form a reflection and electrification-preventing coating film. SOLUTION: Under the atmospheric pressure contg. an organic fluorine compd., a solid delectric is set to at least either counter electrode, which is applied with the pulse forming electric field, and a film substrate is subjected to discharge plasma treatment to form a reflection preventing coating film. Next, this reflection preventing coating film is pasted with a synthetic resin sheet coated with a photosetting electrically conductive composition to form a laminated body of the film substrate/the reflection preventing coating film/the photosetting electrically conductive composition/the synthetic resin sheet, and this laminated body is irradiated with ultraviolet rays to be formed into a set body, and from this set body, the film substrate is peeled to produce the reflection and electrification preventing coating film.

卓也屋良

Papers

Method of treating base material with discharge plasma

Discharge plasma treatment apparatus

Method and apparatus for dry etching

Glow discharge plasma processing method and device thereof

Production of reflection and electrification preventing coating film

卓也 屋良

Papers

Method of treating base material with discharge plasma

Discharge plasma treatment apparatus

Method and apparatus for dry etching

Glow discharge plasma processing method and device thereof

Production of reflection and electrification preventing coating film

卓也屋良