Metal-organic coordination materials are of widespread interest because of the coupled benefits of inorganic and organic building blocks. These materials can be assembled into hollow capsules with a range of properties, which include selective permeability, enhanced mechanical/thermal stability, and stimuli-responsiveness. Previous studies have primarily focused on the assembly aspects of metal-coordination capsules; however, the engineering of metal-specific functionality for capsule design has not been explored. A library of functional metal-phenolic network (MPN) capsules prepared from a phenolic ligand (tannic acid) and a range of metals is reported. The properties of the MPN capsules are determined by the coordinated metals, allowing for control over film thickness, disassembly characteristics, and fluorescence behavior. Furthermore, the functional properties of the MPN capsules were tailored for drug delivery, positron emission tomography (PET), magnetic resonance imaging (MRI), and catalysis. The ability to incorporate multiple metals into MPN capsules demonstrates that a diverse range of functional materials can be generated.

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Engineering multifunctional capsules through the assembly of metal-phenolic networks

pH-Responsive polymers

Recent advances in polymer synthesis have significantly enhanced the ability to rationally design block copolymers with tailored functionality. The self-assembly of these macromolecules in the solid state or in solution allows the formation of nanostructured materials with a variety of properties and potential functions. This Review illustrates recent progress in the field of block copolymer materials by highlighting selected emerging applications.

Functional block copolymers: nanostructured materials with emerging applications.

Nanostructures: Synthesis, Assembly, and Their Applications in Electrochemistry Chengzhou Zhu,† Dan Du,†,⊥ Alexander Eychmüller,‡ and Yuehe Lin*,†,§ †School of Mechanical and Materials Engineering, Washington State University, Pullman, Washington 99164-2920, United States Key Laboratory of Pesticide and Chemical Biology of the Ministry of Education, College of Chemistry, Central China Normal University, Wuhan 430079, P. R. China ‡Physical Chemistry, TU Dresden, Bergstrasse 66b, 01062 Dresden, Germany Pacific Northwest National Laboratory, Richland, Washington 99352, United States

Engineering Ordered and Nonordered Porous Noble Metal Nanostructures: Synthesis, Assembly, and Their Applications in Electrochemistry

Applications Rosaria Ciriminna,† Alexandra Fidalgo,‡ Valerica Pandarus, Franco̧is Beĺand, Laura M. Ilharco,*,‡ and Mario Pagliaro*,† †Istituto per lo Studio dei Materiali Nanostrutturati, CNR, via U. La Malfa 153, 90146 Palermo, Italy ‡Centro de Química-Física Molecular and IN-Institute of Nanoscience and Nanotechnology, Instituto Superior Tećnico, Complexo I, Av. Rovisco Pais 1, 1049-001 Lisboa, Portugal SiliCycle Inc., 2500, Parc-Technologique Boulevard, Quebec City, Quebec G1P 4S6, Canada

The Sol–Gel Route to Advanced Silica-Based Materials and Recent Applications

A semiconductor processing chamber may include a remote plasma region, and a processing region fluidly coupled with the remote plasma region. The processing region may be configured to house a substrate on a support pedestal. The support pedestal may include a first material at an interior region of the pedestal. The support pedestal may also include an annular member coupled with a distal portion of the pedestal or at an exterior region of the pedestal. The annular member may include a second material different from the first material.

Methods and systems to enhance process uniformity

Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

Processing systems and methods for halide scavenging

A method of etching silicon nitride on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and a nitrogen-and-oxygen-containing precursor. Plasma effluents from two remote plasmas are flowed into a substrate processing region where the plasma effluents react with the silicon nitride. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon nitride while very slowly removing silicon, such as polysilicon. The silicon nitride selectivity results partly from the introduction of fluorine-containing precursor and nitrogen-and-oxygen-containing precursor using distinct (but possibly overlapping) plasma pathways which may be in series or in parallel.

Selective etch of silicon nitride

Methods of selectively etching tungsten relative to silicon-containing films (e.g. silicon oxide, silicon carbon nitride and (poly)silicon) as well as tungsten oxide are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H2). Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten. The plasma effluents react with exposed surfaces and selectively remove tungsten while very slowly removing other exposed materials. Sequential and simultaneous methods are included to remove thin tungsten oxide which may, for example, result from exposure to the atmosphere.

Dry-etch for selective tungsten removal

A method of etching doped silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch using partial remote plasma excitation. The remote plasma excites a fluorine-containing precursor and the plasma effluents created are flowed into a substrate processing region. A hydrogen-containing precursor, e.g. water, is concurrently flowed into the substrate processing region without plasma excitation. The plasma effluents are combined with the unexcited hydrogen-containing precursor in the substrate processing region where the combination reacts with the doped silicon oxide. The plasmas effluents react with the patterned heterogeneous structures to selectively remove doped silicon oxide.

Zihui Li

Papers

Methods and systems to enhance process uniformity

Processing systems and methods for halide scavenging

Selective etch of silicon nitride

Dry-etch for selective tungsten removal

Highly selective doped oxide removal method