Showing papers by "Birla Institute of Technology, Mesra published in 1990"
TL;DR: In this article, the authors investigated whether a stress alone applied to a demagnetized ferromagnetic specimen can produce any magnetization and concluded that the complex dislocation configuration during the necking and just prior to tensile fracture, is capable of abruptly orienting the magnetization vectors producing a net resultant component along the axial direction of the circular specimen which gives rise to the observed generation of the high transient magnetic field.
20 citations
TL;DR: In this article, a spatial light modulator (SLM) using reverse saturable absorber molecules is suggested, and the SLM characteristics are derived using a recently proposed steady-state kinetic analysis.
Abstract: Construction of a spatial light modulator (SLM) using reverse saturable absorber molecules is suggested. The SLM characteristics are derived using a recently proposed steady-state kinetic analysis. Results are presented for the rhodamine 6G dye molecules.
5 citations
TL;DR: In this paper, an analytical study is carried out to investigate the effect of optical radiation on two-dimensionalElectron-Gas-Field-Effect-Transistor (TEGFET) and it is found that by varying the incident optical power it is possible to control the I-U characteristics of the device in the same manner as when the gate bias voltage is varied.
Abstract: An analytical study is carried out to investigate the effect of optical radiation on Two-dimensional-Electron-Gas-Field-Effect-Transistor (TEGFET). Numerical calculations are carried out for an Al-GaAs/GaAs structure. The results show that the absorption of optical radiation of suitable wavelength in n-AlGaAs layer considerably enhances the sheet concentration of the 2D-electron gas. The I–U characteristics of the device are studied in the dark as well as under illuminating conditions. It is found that by varying the incident optical power it is possible to control the I–U characteristics of the device in the same manner as when the gate bias voltage is varied. The device can thus respond to an intensity modulated optical signal and can become an attractive IC-compatible optical detector of optically controlled amplifier.
Eine analytische Untersuchung wird durchgefuhrt, um den Einflus optischer Stahlung im 2D-(zweidimensionalen)-Elektronengas-Feldeffekttransistor (TEGFET) zu bestimmen. Numerische Berechnungen werden fur eine AlGaAs/GaAs-Struktur durchgefuhrt. Die Ergebnisse zeigen, das die Absorption optischer Stahlung geeigneter Wellenlange in n-AlGaAs-Schichten die Schichtkonzentration des 2D-Elektronengases betrachtlich erhoht. Die I–U-Charakteristiken des Bauelements werden sowohl im Dunklen als auch unter Belichtungsbedingungen untersucht. Es wird gefunden, das durch Variation der einfallenden optischen Leistung es moglich ist, das die I–U-Charakteristiken des Bauelements in gleicher Weise wie durch Gatevorspannungsanderung gesteuert werden konnen. Das Bauelement kann somit auf ein intensitatsmoduliertes optisches Signal reagieren und kann ein attraktiver IC-kompatibler optischer Detektor oder optisch gesteuerter Verstarker werden.
1 citations