Showing papers by "Freescale Semiconductor published in 1982"

Dual layer passivation

Abstract: When multilayer-metal electronic devices are heated, voids can form in the metal layers Void formation is avoided by using a double dielectric layer as the interlayer dielectric The double layer has a first oxide layer portion in contact with the first metal which is formed by plasma assisted chemical vapor deposition, and a second oxide layer portion formed by other means The plasma formed oxide layer portion is believed to be in compressive stress relative to the substrate

Capacitor with reduced voltage variability

Abstract: An MOS capacitive structure comprising a substrate of a first conductivity type, a first region of the first conductivity type but having a different impurity concentration for contacting the substrate, a second region of opposite conductivity type for contacting the substrate, and a dielectric over a region of the substrate adjacent the first and second regions and having a conductive layer thereon forming one plate of the capacitor while the substrate opposite the conductive layer forms the other plate. The first and second regions are contacted and coupled together in order to provide good electrical contact to the substrate region opposite the conductive layer regardless of whether the substrate under the conductive layer is depleted or inverted.

Fiber optic transceiver

Abstract: A half-duplex transceiver circuit is disclosed in which a single diode acts as both the light emitter and the light detector. The diode is connected in parallel with a junction in an associated device. The forward voltage drop across the diode exceeds the forward voltage drop across the junction.