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Showing papers by "Kangwon National University published in 1988"


Journal ArticleDOI
TL;DR: In this article, the time-of-flight photocurrent transients of electrons and holes in hydrogenated amorphous silicon have been investigated and the results were analyzed by the thermalization model for a double exponential tail state distribution.
Abstract: Time-of-flight photocurrent transients of electrons and holes in hydrogenated amorphous silicon have been investigated. The electron transients reveal a non-dispersive behavior in which the electron drift mobility is thermally activated and field-independent in the wide temperature range of 180–340 K. On the other hand, the hole transients show a dispersive behavior even above room temperature, in which the hole drift mobility is thermally activated and field-dependent. These results are analyzed by the thermalization model for a double exponential tail state distribution.

3 citations


Journal ArticleDOI
TL;DR: In this paper, odd-A nuclei were studied by imposing SO(6) ⊗ SO (6) symmetry and the agreement between calculated and experimental level spectra was found to be satisfactory.
Abstract: We study odd-A nuclei by imposing SO(6) ⊗ SO(6) symmetry. Spinor representations constitute bases for bosonic states in contrast to interacting boson-fermion model. Low-lying energy spectra of gold isotopes are analyzed in this model. The agreement between calculated and experimental level spectra is found to be satisfactory.

1 citations


Journal ArticleDOI
TL;DR: In this paper, the authors investigated light-induced metastable defects in undoped and hydrogenated amorphous silicon and showed that the defects responsible for the photoconductivity decrease are annealed through intermetastable defects which give rise to the increase of the dark conductivity.
Abstract: Light-induced metastable defects are investigated above 200 \ifmmode^\circ\else\textdegree\fi{}C in undoped and hydrogenated amorphous silicon. It is observed that there are two kinds of metastable defects, leading to dark-conductivity and photoconductivity decreases, respectively. Our results suggest that the defects responsible for the photoconductivity decrease are annealed through intermetastable defects which give rise to the increase of the dark conductivity.

1 citations