Showing papers in "Chemistry of Materials in 1988"
TL;DR: In this paper, a dehalosilylation reaction between (Me3Si)3As and GaBr3 results in the facile elimination of approximately two moles of Me3SiCl at room temperature and requires heating of the intermediate solid at temperatures up to 185C in order to afford 93-94% of the total expected amount.
Abstract: : The reactions of (Me3Si)3As with some group 13 trihalides have been explored. The reaction between (Me3Si)3As and GaCl3 results in the facile elimination of approximately two moles of Me3SiCl at room temperature. Further elimination of Me3SiCl occurs less readily and requires heating of the intermediate solid at temperatures up to 185C in order to afford 93-94% of the total Me3SiCl expected. Increasing the temperature does not result in the elimination of additional Me3SiCl, rather a trace of unidentified yellow liquid is formed and gallium arsenide of 95-96% purity is isolated. The reaction between (Me3Si)3As and GaBr3 proceeds in a similar manner, but more by-products are observed and GaAs of 88% purity is obtained. The analogous reaction between (Me3Si)3As and InCl3 in refluxing benzene gives 87% of the theoretical amount of Me3SiCl. Further heating of the resulting solid affords InAs of 98% purity. This is the first report of the use of dehalosilylation reactions to form GaAs and InAs. Keywords: Gallium Arsenide; Indium Arsenide; Preparation.
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