Showing papers in "Soviet physics. Semiconductors in 1987"
Journal Article•
TL;DR: In this paper, the dependence of photoconductivity and absorption in the photon region of 0.8-1.4 eV in hydrogenated amorphous silicon (a-Si:H) have been measured as a function of illumination time and incident light power.
Abstract: Abstract The dependence of photoconductivity and absorption in the photon region of 0.8–1.4 eV in hydrogenated amorphous silicon (a-Si:H) have been measured as a function of illumination time and incident light power. The experimental results can be explained by the change of recombination mechanism of excess carriers during illumination or by the photogeneration of defects with different creation dynamics.
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