Composite transistor device

TLDR: In this article, the authors proposed a method to compensate the short channel effect of an MOS transistor by connecting the drain of a TR part with a large threshold value with the source of a TRS with a small threshold value, and connecting the gates of the TR parts in common.

Abstract: PURPOSE:To compensate the short channel effect of an MOS transistor (TR) by connecting the drain of a TR part with a large threshold value with the source of a TR part with a small threshold value, and connecting the gates of the TR parts in common. CONSTITUTION:An enhancement MOSTR11 and a depletion type MOSTR21 are connected in series to constitute a composite TR. Then a current is flowed from the TR21 to the TR11. This composite TR device corresponds to the short channel effect of the enhancement type or depletion type MOSTR. Consequently, the evil influence of a decrease in gain, variance in linearity and current ratio, etc., upon channel length modulation is all removed.