Patent
Dissipative isolation frames for active microelectronic devices, and methods of making such dissipative isolation frames
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TLDR
In this article, a planar insulating substrate, an active semiconductor electronic device, and a dissipative conductor are used to dissipate high frequency crosstalk radiation, having a center frequency within a range between about 1 gigahertz and about 1,000 GHz.Abstract:
Microelectronic apparatus having protection against high frequency crosstalk radiation, comprising: a planar insulating substrate; an active semiconductor electronic device located over a first region of the insulating substrate; and a doped semiconductor located in a second region of the insulating substrate substantially surrounding the first region. Apparatus further comprising a dissipative conductor overlaying and adjacent to the doped semiconductor. Apparatus additionally comprising metallic test probe contacts making electrical connections with the active semiconductor electronic device. Application of the apparatus to dissipate crosstalk radiation having a center frequency within a range between about 1 gigahertz and about 1,000 gigahertz. Methods for making the apparatus.read more
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