Patent
Formation of silicon oxide film
TLDR
In this paper, the authors proposed a method to obtain excellent SiO2 film having flattening function and heat resistance in addition to reliability by using polyhydrosilsesquioxane.Abstract:
PURPOSE:To obtain excellent SiO2 film having flattening function and heat resistance in addition to reliability by a method wherein, in forming an SiO2 film for interlayer insulation to a semiconductor device, it is coated with the solution of silicon resin expressed by a specific formula, which is then heated at 350 deg.C or more. CONSTITUTION:This formation is based on a viewpoint that the use of silicon resin whose atoms or atomic groups scatter in an extremely small amount in heat treatment produces the SiO2 film having heat resistance without the decrease in flattening function after heat treatment because the reduction in volume of the scattering acid is small. In other words, when an SiOx film is formed with the silicon resin expressed by the formula, H2 is readily decomposed in thermal decomposition; therefore, the amount of impurities in the SiOx film is small, and pin holes are fine, besides the strain generated by the increase in volume due to SiO oxidation becomes small. In such a manner, polyhydrosilsesquioxane is used for preparation of SiOx films.read more
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Method for the formation of a silicon oxide film
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TL;DR: In this paper, the surface of a ceramic or metallic part is covered with a thin layer of a liquid solution of a reactive silicon oxide precursor (rSiO-p) such as Hydrogen Silsesquioxane (HSQ) in Methyl Isobytul Ketone (MIBK) or volatile methyl siloxane (VMS), heating the part to a curing temperature of the rSiO -p, and after a curing time the reactive silicon dioxide precursor is transformed into a thin-layer of essentially pinhole free silicon oxide.
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Process for preparing a highly pure silicone ladder polymer
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