Patent
Gallium phosphide layer formed on silicon substrate - cleaned by heating in hydrogen atmos. to remove silicon oxide film
TLDR
In this article, the formation of a monocrystalline layer of a semiconductive cpd is possible when a SiO2-film is first removed by heating the silicon substrate in an atmos.Abstract:
Heteroepitactic formation of a monocrystalline layer of a semiconductive cpd. (esp. GaP) on a silicon substrate is possible when a SiO2-film is first removed by heating the silicon substrate in an atmos. of purified H2 at 950-1100 degrees C. The substrate is then additionally contacted with a HCl-contg atmos. cooled to a temp. suitable for the deposition from the vapour phase (pref. 800-850 degrees C). GaP (opt. doped) is pref. used as a source of Ga and P. The growth of the GaP layer is very rapid. The method is esp. suitable for the prodn. of luminescent diodes.read more
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Patent
Method for producing a III/V Si template
TL;DR: In this article, a Si wafer with a layer of a III/V semiconductor epitaxially applied to its surface is shown to have a lattice constant differing by less than 10% from that of Si.
Patent
Systeme et procede de croissance epitaxiale par faisceau moleculaire avec introduction d'hydrogene
TL;DR: In this paper, a systeme et procede de croissance epitaxiale par faisceau moleculaire avec introduction d'hydrogene is presented.