Patent
Gate drive circuit
Reads0
Chats0
TLDR
A gate drive circuit includes a turn-on circuit having an upper limiter for receiving a gate drive signal as mentioned in this paper, which limits a voltage input to the base of the transistor to not exceed a first predetermined value.Abstract:
A gate drive circuit includes a turn-on circuit having an upper limiter for receiving a gate drive signal. The upper limiter has an output terminal. The turn-on circuit also has a transistor having a base connected to the output terminal of the upper limiter. In addition, the terminal has a terminal connected to a gate of a power switching device. The upper limiter limits a voltage input to the base of the transistor to not exceed a first predetermined value.read more
Citations
More filters
Patent
Power conversion apparatus
Akira Nakasaka,Kenichi Oohama +1 more
TL;DR: In this article, a power conversion apparatus is integrated in a frame as an internal unit, and the internal unit is fixed within a case through the frame, where the electronic components are surrounded by the frame and includes a first wall section, and second and third wall sections extending from both sides of the first wall.
Patent
Drive circuit for switching element
TL;DR: In this paper, a drive circuit for a switching element includes a constant-current control unit and a restriction unit, and the restriction unit restricts, to a reference voltage, a voltage between the open/close control terminal and a first end of a pair of ends of a current flow path of the switching element.
Patent
Driver for switching element and control system for rotary machine using the same
Junichi Fukuta,Tsuneo Maebara +1 more
TL;DR: In this article, a dissipating unit includes a rectifier having a pair of first and second conductive terminals connected to the input terminal of the switching element, and a failure determiner determines whether there is a failure in the dissipated unit as a function of a potential at a point on the first electrical path from the failure determination terminal to the second terminal.
Patent
Load drive apparatus and semiconductor switching device drive apparatus
TL;DR: In this paper, a load drive apparatus includes a switching device, a gate drive circuit, a clamp circuit, an arithmetic device, and a temperature detection circuit, which detects a temperature of the switching device and calculates a voltage corresponding to a variation in a mirror voltage.
Patent
Device for driving switching elements
Junichi Nagata,Tsuneo Maebara +1 more
TL;DR: In this paper, a drive unit controls the operation of a corresponding power switching element such as IGBT which forms an inverter and a converter to supply an operation current to a motor generator.
References
More filters
Patent
Controlled switching of non-regenerative power semiconductors
TL;DR: In this article, the authors present a method for the controlled switching of non-regenerative power semiconductors to provide for a less rapid rate of change of load current while the power semiconductor is in its active region, thereby reducing electromagnetic interference.
Patent
Gate drive apparatus
TL;DR: In this article, the variance of switching speeds attributed to the variances of threshold voltages and mirror voltages in a plurality of switching devices which are driven by the gate drive apparatus can be suppressed.
Patent
Gate circuit and gate circuit control method
Kimihiro Hoshi,公弘 星 +1 more
TL;DR: In this paper, a gate driving circuit for shortening a switching period without destroying a gate type semiconductor element is proposed. But the circuit requires the gate type SINR element to be installed in the circuit.
Patent
Power transistor overcurrent protection circuit
Chihiro C,Makoto C +1 more
TL;DR: In this article, an overcurrent protection circuit for a power transistor for flowing a main current in response to a gate drive voltage generated by a gate circuit is presented. But it is not shown how to detect the main current flowing in the power transistor.
Patent
Gate drive circuit for semiconductor switching element
TL;DR: In this paper, the authors propose to reduce a switching loss while suppressing occurrence of a current surge and a noise at a turning on time of an insulated gate type semiconductor switching element and to prolong a lifetime of the element.