Patent
Image sensing device using MOS-type image sensing element whose threshold voltage of charge transfer switch and reset switch is different from that of signal output transistor
Tetsunobu Kochi,Shigetoshi Sugawa,Isamu Ueno,Katsuhisa Ogawa,Toru Koizumi,Katsuhito Sakurai,Hiroki Hiyama +6 more
TLDR
In this article, a photoelectric conversion device has a plurality of pixel cells each of which includes a photo-electric conversion element, a field effect transistor having the gate area for storing signal charge generated by the photo conversion element and the source-drain path for outputting a signal corresponding to the signal charge stored in the gate.Abstract:
In a photoelectric conversion device having a plurality of pixel cells each of which includes a photoelectric conversion element, a field effect transistor having the gate area for storing signal charge generated by the photoelectric conversion element and the source-drain path for outputting a signal corresponding to the signal charge stored in the gate, a first power supply line for supplying electric power to the field effect transistor, and a first switch connected between the field effect transistor and the first power supply line, when a reset voltage for resetting the gate of the field effect transistor is Vsig0, a threshold voltage of the field effect transistor is Vth, current flowing through the field effect transistor is Ia, a voltage applied via the first power supply line is Vc1, and a series resistance of the first switch is Ron, each pixel cell is configured to satisfy a condition determined by Vc1−Ron×Ia>Vsig0−Vth.read more
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Patent
Solid state image pickup device and camera
Shunsuke Inoue,Shin Kikuchi +1 more
TL;DR: In this paper, a solid state image pickup device which can prevent color mixture by using a layout of a capacitor region provided separately from a floating diffusion region and a camera using such a device are provided.
Patent
Solid-state imaging apparatus
TL;DR: In this article, a solid-state imaging apparatus which performs a global exposure operation, in a determined imaging region, for performing exposure as matching respective start times and respective end times of all rows, comprises: plural unit pixels arranged in two-dimensional matrix and each comprising a photoelectric converting unit for generating a pixel signal by photoelectric conversion, a holding unit for holding the generated pixel signal, and a first gate for transferring the generated signal to the holding unit; a vertical controlling circuit for resetting the unit pixel; and an first driving line connected to the first controlling line, and
Patent
Photoelectric conversion apparatus
Taro Kato,Mineo Shimotsusa,Sano Hiroaki,Takeshi Ichikawa,Yasuhiro Sekine,Mahito Shinohara,Genzo Momma +6 more
TL;DR: In this article, a photoelectric conversion apparatus includes a semiconductor substrate having a photo-electric conversion portion, and an in-layer lens is provided on a side of the waveguide member.
Patent
Image pickup apparatus and image pickup system
TL;DR: In this paper, the authors proposed a pixel portion in which pixels are arranged, the pixels each including a first semiconductor region of first conductivity type having signal charges as majority carriers and a second semiconductor Region of second conductivity Type having signal charge as minority carriers.
Patent
Solid-state imaging apparatus and imaging system
TL;DR: In this article, a pixel array has a region formed from an electrical conductor and a semiconductor to which a fixed electric potential is supplied, each pixel includes a photoelectric converter, a charge-voltage converter, and an amplification unit which amplifies a signal generated by the photoelectric converters by a positive gain and outputs the amplified signal to an output line.
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Patent
Solid-state image pickup device having a plurality of photoelectric conversion elements on a common substrate
TL;DR: In this article, a photoelectric conversion element for converting an optical signal in the invisible light range into an electrical signal, and photoelectric converter elements for converting optical signals in the visible-light range into electrical signals are formed on a common semiconductor chip.
Patent
CMOS photodetectors with wide range operating region
TL;DR: In this article, a charge-integration mode photo-detector built on an n-type substrate is presented, which includes a p+n photodiode and a gate-biased charge storable MOS transistor.
Patent
Photoelectric converting device
TL;DR: In this paper, a photoelectric converting device is provided with photo-induced carriers in a control electrode area, which is capable of an accumulating operation for accumulating photoinduced carriers, a read-out operation for reading an output controlled by a voltage generated by said accumulation, and a refreshing operation for dissipating the carriers accumulated in said control electrode areas, by means of controlling the potential of said control electrodes area in floating state through a capacitor.
Patent
Photoelectric converting device and information processing apparatus employing the same
TL;DR: In this paper, a photoelectric converting device with a control electrode area of a semiconductor of a first conductive type and at least two main electrode areas of a second conductive types different from the first one, and capable of accumulating photo-generated carriers in the control area is presented.
Patent
Solid state image sensor and a driving method thereof
Ando Fumihiko,Kazuhisa Taketoshi,Katsu Tanaka,Masao Yamawaki,Hidekazu Yamamoto,Hiroshi Kawashima,Naofumi Murata +6 more
TL;DR: In this paper, the threshold voltage of the third MOS transistor is set higher than that of the second MOS transistors, where the threshold voltages of the first and the third transistors are different.