Light-emitting diode epitaxial wafer and preparation method thereof

TLDR: In this paper, a light-emitting diode epitaxial wafer is characterized by comprising a low-temperature buffer layer GaN, an undoped GaN layer, a uAl superlattice layer, an N-type GaNlayer, a first barrier layer, shallow quantum well layer, multi-quantum well layer and an electronic barrier layer.

Abstract: The invention discloses a light-emitting diode epitaxial wafer and a preparation method thereof. The light-emitting diode epitaxial wafer is characterized by comprising a low-temperature buffer layer GaN, an undoped GaN layer, a uAl superlattice layer, an N-type GaN layer, a first barrier layer, a shallow quantum well layer, a multi-quantum well layer, an electronic barrier layer, an Mg-doped P-type GaN layer and a CTL layer, wherein the undoped GaN layer is located on the low-temperature buffer layer GaN; the uAl superlattice layer is located on the undoped GaN layer; the N-type GaN layer is located on the uAl superlattice layer; the first barrier layer is located on the N-type GaN layer; the shallow quantum well layer is located on the first barrier layer; the multi-quantum well layer is located on the shallow quantum well layer; the electronic barrier layer is located on the multi-quantum well layer; the Mg-doped P-type GaN layer is located on the electronic barrier layer; and the CTL layer is located on the Mg-doped P-type GaN layer. According to the light-emitting diode epitaxial wafer and the preparation method thereof disclosed by the invention, the backward voltage can be significantly improved by adding the uAl superlattice layer structure.