Patent
Process for the production of silicon carbide, having a high specific surface, for catalyst substrate
TLDR
In this article, a process for the production of fine silicon carbide grains, having a submicronic average size and a specific surface at least equal to 100 m g, is described.Abstract:
The invention relates to a process for the production of fine silicon carbide grains, having a submicronic average size and a specific surface at least equal to 100 m g , intended especially to be used as a catalyst support for petrochemistry, this process consisting in reacting silicon monoxide SiO vapours with carbon According to this process: - SiO vapours are generated in a first reaction region by heating an SiO2 + Si mixture, at a temperature between 1100 and 1400 DEG C, at a pressure between 01 and 15 hPa; - the SiO vapours are brought into contact, in a second reaction region, with the reactive carbon, in the divided state, with a specific surface at least equal to 200 m g , at a temperature between 1100 and 1400 DEG Cread more
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Process for preparing metal carbides of high specific surface from activated carbon foams
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