Patent
Schottky barrier pressure sensitive semiconductor device with air space around periphery of metal-semiconductor junction
TLDR
In this article, a pressure sensitive transistor whose emitter or collector junction is formed by use of a Schottky barrier junction is described, wherein the current through the transistor changes in accordance with the applied pressure when pressure is applied to said junction by pressure applying means.Abstract:
Disclosed is a pressure-sensitive transistor whose emitter or collector junction is formed by use of a Schottky barrier junction and wherein the current through the transistor changes in accordance with the applied pressure when pressure is applied to said junction by pressure applying means. Such a transistor is advantageous in that a high pressure-to-current conversion factor is obtained, little noise is generated at the junction, and the reverse leakage current appearing at the junction is extremely small.read more
Citations
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Ultrasonic transducer fabricated as an integral park of a monolithic integrated circuit
TL;DR: In this paper, an array of electrostatic transducers is fabricated on a monolithic integrated circuit chip having provision for detection, amplification, and signal processing of received echoes, and the transducers are made by laterally etching an insulating layer through a small hole in the overlying layer to create a void region, then depositing a sealing layer to seal the etch holes.
Patent
Schottky-barrier semiconductor device
TL;DR: A Schottky barrier sensor has a semiconductor substrate having a pair of metal contacts formed thereon The contacts form a Schotty barrier at each interface between metal and substrate, and the substrate is mounted on a surface as mentioned in this paper.
Patent
Sensing transducer using a Schottky junction and having an increased output signal voltage
Dragan Mladenovic,Mahesh Shah +1 more
TL;DR: In this paper, a Schottky junction (12) is used to sense pressure, and a substantially constant reverse current (I 1 ) is applied to the junction, which is proportional to the change in pressure on the junction itself.
Patent
Pressure detecting device
TL;DR: In this article, a single-crystal semiconductor chip is formed to one surface side of a metallic diaphragm for pressure detection, and a pressure medium is introduced into the side of the other surface 12 of the diaphrasm surface 10 to detect pressure according to the deformation of the dymragm surface.
Patent
Diode, method for fabricating the diode, and coplanar waveguide
TL;DR: The diode of the present invention includes: a cathode electrode and an anode electrode that are disposed on a semiconductor substrate and are spaced apart from each other; and a shielding metal member placed between the cathode and anode electrodes as mentioned in this paper.
References
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Patent
High voltage schottky barrier diode
TL;DR: In this paper, a surface barrier diode is provided on one surface with an annular region 16 forming a PN junction with the surrounding region 12 to increase the breakdown voltage of the device, a further annular regions 18 being situated within the region 16 and forming a further Pn junction therewith, and the surface barrier electrode 19 is provided in contact with all three regions 12, 16, 18.
Related Papers (5)
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