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Patent

Solid image pickup device

TLDR
In this paper, a bias light source was provided near the photosensitive part of CCD13 and was so constituted that light source 19 may irradiate this photo-sensitive part uniformly, thus obtaining a good picture inside as well as outside without making a dynamic range narrow.
Abstract
PURPOSE:To obtain a good picture inside as well as outside without making a dynamic range narrow by irradiating a solid image pickup device with a bias light and controlling the bias charge generated by this irradiation. CONSTITUTION:The optical image of object 11 is focused onto the photosensitive part of CCD13 through image pickup lens 12. Bias light source 19 using a LED is provided near the photosensitive part of CCD13 and is so constituted that light source 19 may irradiate this photosensitive part uniformly. Output signals of CCD13 are amplified into a prescribed level by amplifier 14 and are applied to process circuit 15 and are added to synchronizing signals there and are subjected to DC reproducing, gamma correction, pick signal clip, etc., thereby obtaining standard TV signals. On the other hand, a part of the output of amplifier 14 is applied to detection circuit 16 and is detected, and after that, it has the phase shifted by 180 deg. in polarity inversion circuit 17 and is applied to voltage control circuit 18. Circuit 18 controls a voltage applied to light source 19 and changes the output light quantity of light source 19.

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Patent

Semiconductor device and backside illumination solid-state imaging device

TL;DR: In this article, a pixel unit, an analog circuit and a digital circuit are formed in a first, second and third region of the semiconductor substrate, and an interconnect is formed on each of the first and second principal faces of the second region.
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Solid-state image pickup apparatus, method for manufacturing solid-state image pickup apparatus, and electronic apparatus

TL;DR: In this paper, a solid-state image pickup apparatus is provided with a p-type compound semiconductor layer having a chalcopyrite structure, an electrode formed on the p type compound semiconducting layer; and an n-type layer, which is separately formed by each pixel.
Patent

Image input device

TL;DR: In this article, the authors proposed to widen an image pickup range by obtaining a horizontal picture element number as the multiple of integer of a vertical picture element for the light receiving part of a solid-state image pickup element and providing a means to be able to change a scanning when an aspect ratio is changed and the image pickup is executed.