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Patent

Vacuum treating method

Umeda Nobuyuki
TLDR
In this paper, a substrate exchanging chamber is evacuated by closing a gate 7 and opening an evacuation gate valve 8, and a substrate 2 treated in a vacuum treating chamber 6 is conveyed into the chamber 1 by opening the gate 7.
Abstract: 
PURPOSE:To reduce adherence of dust to a wafer by introducing purging gas of higher temperature than temperature in a vacuum chamber onto a material to be treated in the chamber for placing the material to be treated, and setting the chamber to an atmospheric pressure. CONSTITUTION:A substrate exchanging chamber 1 is evacuated by closing a gate 7 and opening an evacuation gate valve 8, and a substrate 2 treated in a vacuum treating chamber 6 is conveyed into the chamber 1 by opening the gate 7. Then, the gate 7 and the valve 8 are closed, and a purging gas valve 9 is opened to gradually introduce nitrogen gas (N2) heated by a gas heater 3 from a purging gas inlet 4 onto the substrate 2. When the chambers 1 becomes an atmospheric pressure therein, a cover 1A is opened, and the substrate 2 is removed. The chamber 1 is cooled by a cooler 5 from its outside.

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Heat treatment method and heat treatment device

Kato Kanzo, +2 more
TL;DR: In this article, a method for gradually heating a substrate at different treatment temperatures comprises the steps of: carrying the substrate into a heat treatment device and rapidly raising the temperature of the substrate carried into the heat treatment devices to a first temperature (preparing step), heat-treating the substrate at a second temperature in a position where the substrate is spaced by a prescribed distance from a heat-treatment plate in the Heat treatment device (first heating step), and mounting the substrate on the heat treating plate and heating the substrate in a third temperature (second heating step).
Patent

Etching apparatus and method therefor

Doi Takayoshi, +1 more
TL;DR: In this paper, the problem of after-corrosion in which an aluminum wire is broken at a stepped area can be prevented reliably because the remaining chlorine adhered to the aluminum wire of the substrate 4 to be etched reacts with water in the atmosphere.