How do defects affect selected area electron diffraction peaks?
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Defects in crystals can significantly impact selected area electron diffraction (SAED) patterns. Stacking faults and lattice defects can lead to unusual features in diffraction patterns, such as periodic intensity distributions or streaking around Bragg spots . Additionally, defects like column defects can cause elliptical distortion in diffraction patterns, which can be corrected by adjusting objective lens stigmators . In scintillation detectors, defects can affect detector efficiency through non-radiative electron excitation transfer, emphasizing the importance of investigating defects in crystals like Bi4Ge3O12 . Errors in the focal length of the objective lens or the intermediate lens setting can also introduce errors in the recorded diffraction pattern, highlighting the need for precise operational procedures in electron microscopy experiments .
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| Papers (5) | Insight |
|---|---|
2 Citations | Defects like stacking faults and superlattice structures can cause elongation and anomalies in selected-area electron diffraction peaks, impacting the diffraction pattern's contrast and intensity. |
7 Citations | Defects in crystals can lead to anomalous diffuse scattering around selected area electron diffraction peaks, impacting the interpretation of crystal structures and ordering processes. |
| Column defects cause elliptical distortion in electron diffraction patterns. A script-based method corrects this by adjusting objective lens stigmators to minimize distortion, achieving distortion-free selected area electron diffraction. | |
| Defects like stacking faults and grain boundaries cause periodic intensity distributions or streaking around Bragg spots in selected area electron diffraction patterns, as observed and calculated in the study. | |
| Defects like incorrect focal length or lens settings can lead to errors in selected area electron diffraction patterns by causing contributions from areas outside the defined aperture. |
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