How silicon infiltrate into SiC?
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Silicon infiltrates into silicon carbide (SiC) through various methods such as reactive melt infiltration with different alloys. Studies have shown that infiltrations of SiC samples by hexadecane and molten silicon induce shifts in pore size distributions, with liquid silicon filling larger pores rapidly . Reactive melt infiltration processes using Si-based alloys or Al-Si-xTi melts have been successful in improving the mechanical properties of SiC ceramics, leading to enhanced strength and toughness . Additionally, the Si-C reaction bonding method utilizing phenolic resin-MgCl2 systems as carbon precursors has been effective in achieving strong interfacial bonding in SiC ceramics, enabling stable joining and high flexural strength . These methods demonstrate the versatility and effectiveness of silicon infiltration into SiC for enhancing composite properties.
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| Papers (5) | Insight |
|---|---|
| Silicon infiltrates into SiC by reacting with the carbon precursor, phenolic resin, at high temperature, forming SiC-SiC joints with strong interfacial bonding. | |
| Silicon infiltrates into SiC through reactive melt infiltration, optimizing interfacial properties for joint microstructures in Si-Ti/C and Si-Ti/SiC systems, crucial for CMC fabrication. | |
1 Citations | Not addressed in the paper. |
| Silicon infiltrates into SiC through the reactive infiltration process using Si-Zr alloy, forming dense Si-Zr-SiC composites at 1500-1700 °C in porous carbonaceous preforms containing graphite and SiC powders. | |
4 Citations | Silicon infiltrates SiC through rapid filling of larger pores compared to hexadecane, with a dissolution-recrystallization mechanism possible. The process is faster and occurs at 1500°C. |
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