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What are the parameters in NCFET used for DPA resilent?

Negative impedance converter

Carbon nanotube field-effect transistor

DNA field-effect transistor

Ferroelectricity

Power–delay product

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The parameters in Negative Capacitance Field-Effect Transistors (NCFET) that are crucial for Differential Power Analysis (DPA) resilience include sub-threshold swing (SS), ON-OFF current ratio, and gate capacitance. NCFETs exhibit steep switching characteristics due to negative capacitance, resulting in SS values below 60 mV/decade . By optimizing parameters like pocket thickness and ferroelectric properties, NCFET designs can achieve an OFF current of 1.9 × 10−11 A/μm, ON-OFF current ratio of 108, and SS of 36.2 mV/decade, enhancing their resilience against DPA attacks . Additionally, the incorporation of ferroelectric materials in NCFETs can lead to improved performance measures, making them strong candidates for implementing high-performance digital circuits .

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Proceedings Article•DOI Analysis of small signal parameters of NC-JAM-FET for high frequency RF applications Sneh Lata Yadav, Sonam Rewari, Rajeshwari Pandey - Show less +2 more 24 Nov 2022	Not addressed in the paper.
Open access•Proceedings Article•DOI Investigation of device parameters for field-effect DNA-sensors by three-dimensional simulation Eddie Howell, Clemens Heitzinger, Gerhard Klimeck - Show less +2 more 01 Oct 2006 3 Citations	Not addressed in the paper.
Open access•Journal Article•DOI Comparative Performance Study of Difference Differential Amplifier Using 7 nm and 14 nm FinFET Technologies and Carbon Nanotube FET Anand Kumar, M. Janakirani, Mona Anand, Sudeep Sharma, Chettiyar Vani Vivekanand, Ankit Chakravarti - Show less +5 more 17 Oct 2022-Journal of Nanomaterials 2 Citations	Parameters in CNTFET for DDA resilience include slew rates of 10.8 V/femtosecond, settling times of 0.65 femtosecond, PSRR of 2.53 dB, dynamic range of 198 mV, and open loop differential gain of 116.03 dB.
Open access•Journal Article•DOI Optimization of CNFET Parameters for High Performance Digital Circuits Shimaa Ibrahim Sayed, M. M. Abutaleb, Zaki Bassuoni Nossair - Show less +2 more 28 Aug 2016-Advances in Materials Science and Engineering 33 Citations	Not addressed in the paper.
Journal Article•DOI A new pocket-doped NCFET for low power applications: Impact of ferroelectric and oxide thickness on its performance Malvika, Bijit Choudhuri, Kavicharan Mummaneni - Show less +2 more 01 Aug 2022-Micro and nanostructures 6 Citations	Not addressed in the paper.

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