How hysterisis of piezo affect AFM retract curve?4 answersHysteresis in piezoelectric actuators significantly impacts the retract curve of Atomic Force Microscope (AFM) images. The hysteresis behavior of piezo actuators can lead to reduced positioning accuracy and distorted AFM images. Various studies have focused on modeling and correcting hysteresis effects in AFM systems. For instance, a Prandtl-Ishlinskii hysteresis model has been applied to reduce undesired hysteresis effects in AFM systems, resulting in improved performance. Additionally, the use of a radial basis function neural network (RBFNN) in conjunction with a self-tuning PID controller has shown promising results in minimizing the impact of hysteresis on AFM systems, enhancing system performance compared to open-loop and direct closed-loop systems. Correcting hysteresis in piezo actuators is crucial for achieving accurate and reliable AFM retract curves.
How to estimate hysteresis errors and repeatability in finger force measurements using piezoresistive sensors?5 answersHysteresis errors and repeatability in finger force measurements using piezoresistive sensors can be estimated through various methods. One approach is to use a backpropagation (BP) neural network to address hysteresis nonlinearity in conductive fibre-based tactile sensors. Another method involves modeling hysteresis behavior using the Bouc-Wen model and compensating for it through closed-loop displacement control. Additionally, the Preisach Operator (PO) function can be used to characterize and compensate for hysteresis in force sensing resistors (FSRs). Capacitance measurements have also been found to yield lower hysteresis error compared to conductance readings in FSRs. These approaches contribute to improving the accuracy and reliability of force measurements in various applications.
What recent trends in MEMS applications?4 answersRecent trends in MEMS applications include the development of smart, low-cost, and compact audio systems for consumer devices, medical equipment, automotive systems, and more. MEMS and NEMS based devices offer large-scale integration of sensors suitable for industrial and consumer applications, with low power consumption and reduced batch fabrication cost. MEMS-based gas sensors have witnessed modifications and breakthroughs in sensing material, form factor, and transduction mechanisms, while NEMS-based gas sensors offer ultra-high sensitivity. MEMS applications in electronics and engineering have expanded to include nano-scale sensors in diagnostics, consumer electronics, automotive, energy harvesting, and IoT-based applications. 3D printing of MEMS has emerged as a potential solution for producing new structures and enabling faster and less expensive production of common systems.
How can a HCI system be designed to use an accelerometer sensor to detect microgestures?4 answersA HCI system can be designed to use an accelerometer sensor to detect microgestures by developing a user-specific SVM-based classifier for fine-grained finger and palm motions. This approach has been proposed in the context of wearables, specifically using inertial sensors in a commercial smartwatch. Additionally, a regression-based approach can be used to predict the distance parameter, which is demonstrated on a swipe gesture with an error of 14%. Another paper suggests using a three-axis accelerometer arranged on a shoe to recognize foot movements and determine their position, improving mobile interaction in various situations, including gaming and working in limited space. These approaches highlight the potential of using accelerometer sensors for gesture recognition in HCI systems.
Area of hysteresis in memory devices4 answersThe area of hysteresis in memory devices can vary depending on different factors such as the type of material used and the presence of light illumination. In the case of fully solution processed aluminium oxide (ALPO) dielectric based devices, a large variation of memory hysteresis of 810mV was obtained with respect to different light illuminations. In the case of nanocrystal embedded metal-oxide-semiconductor (NC-MOS) capacitors, a hysteresis of 2V was demonstrated, which is large enough to enable the use of nanocrystal embedded devices as memory devices. Hybrid organic-inorganic perovskite materials also exhibit hysteresis in memory devices, with the memory device showing an operating voltage as low as 0.25V. The area within the hysteresis loop in a memristor driven by a periodical voltage or current is directly related to the value of action potential.
Why does negative hysteresis occur in humidity sensors?1 answersNegative hysteresis occurs in humidity sensors because the electrical resistance of the sensors increases as humidity levels increase. This is the case for the majority of humidity sensors currently in use. The root cause of this negative hysteresis is the presence of oxygen vacancy defects in the sensing materials. These defects affect the conductivity of the materials and lead to an increase in resistance with increasing humidity. The hysteresis-induced errors in capacitance and conductance measurements of humidity sensors can be attributed to the sorption/desorption hysteresis of the sensing materials. The molecular compositions and interactions of the sensing materials with water molecules play a role in the hysteresis behavior. By studying and understanding the hysteresis, it is possible to develop humidity sensors with improved performance and accuracy.